scholarly journals Deep levels induced by reactive ion etching in n- and p-type 4H–SiC

2010 ◽  
Vol 108 (2) ◽  
pp. 023706 ◽  
Author(s):  
Koutarou Kawahara ◽  
Michael Krieger ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Reactive Ion Etching ◽  
Deep Levels ◽  
Ion Etching ◽  
P Type

Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 759-762
Author(s):  
Koutarou Kawahara ◽  
Giovanni Alfieri ◽  
Michael Krieger ◽  
Tsunenobu Kimoto
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reactive Ion Etching ◽  
Deep Levels ◽  
Total Density ◽  
Ion Etching ◽  
Initial Concentration ◽  
Grown Sample ◽  
Transient Spectroscopy ◽  
P Type

In this study, deep levels are investigated, which are introduced by reactive ion etching (RIE) of n-type/p-type 4H-SiC. The capacitance of as-etched p-type SiC is remarkably small due to compensation or deactivation of acceptors. These acceptors can be recovered to the initial concentration of the as-grown sample after annealing at 1000oC. However, various kinds of defects remain at a total density of ~5× 1014 cm-3 in a surface-near region from 0.3 μm to 1.0 μm even after annealing at 1000oC. The following defects are detected by Deep Level Transient Spectroscopy (DLTS): IN2 (EC – 0.35 eV), EN (EC – 1.6 eV), IP1 (EV + 0.35 eV), IP2 (HS1: EV + 0.39 eV), IP4 (HK0: EV + 0.72 eV), IP5 (EV + 0.75 eV), IP7 (EV + 1.3 eV), and EP (EV + 1.4 eV). These defects generated by RIE can be significantly reduced by thermal oxidation and subsequent annealing at 1400oC.

Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion

2000 ◽  
Vol 29 (6) ◽  
pp. 837-840 ◽  
Author(s):  
J. Antoszewski ◽  
C. A. Musca ◽  
J. M. Dell ◽  
L. Faraone
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
P Type

Mercury annealing of reactive ion etching induced p- to n-type conversion in extrinsically doped p-type HgCdTe

1998 ◽  
Vol 83 (10) ◽  
pp. 5555-5557 ◽  
Author(s):  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
C. A. Musca ◽  
J. Antoszewski ◽  
J. M. Dell ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Type Conversion ◽  
Ion Etching ◽  
P Type

Deep Levels Induced by SiCI4 Reactive Ion Etching in GaAs

1993 ◽  
Vol 325 ◽  
Author(s):  
N.P. Johnson ◽  
M. A. Foad ◽  
S. Murad ◽  
M. C. Holland ◽  
C. D. W. Wilkinson
Keyword(s):  
Deep Level ◽  
Reactive Ion Etching ◽  
Depth Profiling ◽  
Deep Levels ◽  
Small Concentration ◽  
Conduction Band Edge ◽  
Experimental Conditions ◽  
Ion Etching ◽  
Self Bias ◽  
Transient Spectroscopy

AbstractDeep Level Transient Spectroscopy (DLTS) is used to investigate the effect of SiC14 Reactive Ion Etching (RIE) on GaAs. At high power (150-80 W) with high DC self bias (380-240 V), five deep levels trapping electrons are observed at energies of 0.30, 0.42, 0.64, 0.86 and ∼0.8 eV below the conduction band edge. Depth profiling reveals an approximate exponential decay of the concentration of the deep levels. At low power the induced concentration falls, the small concentration of remaining deep levels is close to control (no etching) samples. The induced deep levels can account for reduced conductances in n+GaAs wires defined by RIE under similar experimental conditions.

Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped P-Type hgcdte

1997 ◽  
Vol 487 ◽  
Author(s):  
C. A. Musca ◽  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
J. M. Dell ◽  
J. Antoszewski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Laser Beam ◽  
Reactive Ion Etching ◽  
Epitaxial Layers ◽  
Processing Conditions ◽  
Induced Current ◽  
Type Conversion ◽  
Ion Etching ◽  
Type Layer ◽  
P Type

AbstractMercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.31) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2× 1016 cm−3, μ=350 cm2.V−1.−1).

scholarly journals P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth

2005 ◽  
Vol 483-485 ◽  
pp. 633-636 ◽  
Author(s):  
Mihai Lazar ◽  
Christophe Jacquier ◽  
Christiane Dubois ◽  
Christophe Raynaud ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Sheet Resistance ◽  
Doping Concentration ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Substrate Interface ◽  
Selective Epitaxial Growth ◽  
High Doping Concentration ◽  
P Type

Al-Si patterns were formed on n-type 4H-SiC substrate by a photolithographic process including wet Al etching and Si/SiC reactive ion etching (RIE) process. RF 1000°C annealing under C3H8 flow was performed to obtain p+ SiC layers by a Vapour-Liquid-Solid (VLS) process. This method enables to grow layers with different width (up to 800 µm) and various shapes. Nevertheless the remaining Al-based droplets on the largest patterns are indicators of crack defects, going through the p+ layer down to the substrate. SIMS analyses have shown an Al profile with high doping concentration near the surface, high N compensation and Si/C stoechiometry variation between the substrate and the VLS layer. The hydrogen profile follows the Al profile in the VLS layer with an overshoot at the VLS/substrate interface. I-V measurements performed directly on the semiconductor layers have confirmed the formed p-n junction and allowed to measure a sheet resistance of 5.5 kW/ı

Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching

2016 ◽  
Vol 120 (15) ◽  
pp. 155304 ◽  
Author(s):  
J. D. McNamara ◽  
K. L. Phumisithikul ◽  
A. A. Baski ◽  
J. Marini ◽  
F. Shahedipour-Sandvik ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Surface Photovoltage ◽  
Ion Etching ◽  
P Type

Characterisation of reactive-ion-etching-induced type-conversion in p-type HgCdTe using scanning laser microscopy

1998 ◽  
Vol 184-185 ◽  
pp. 1219-1222 ◽  
Author(s):  
J.F. Siliquini ◽  
J.M. Dell ◽  
C.A. Musca ◽  
L. Faraone ◽  
J. Piotrowski
Keyword(s):  
Reactive Ion Etching ◽  
Scanning Laser ◽  
Type Conversion ◽  
Ion Etching ◽  
Laser Microscopy ◽  
Scanning Laser Microscopy ◽  
P Type
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