Oxygen Precipitation in Heavily Doped Silicon

1990 ◽  
Vol 137 (2) ◽  
pp. 647-652 ◽  
Author(s):  
S. K. Bains ◽  
D. P. Griffiths ◽  
J. G. Wilkes ◽  
R. W. Series ◽  
K. G. Barraclough
Keyword(s):  
Oxygen Precipitation ◽  
Doped Silicon ◽  
Heavily Doped

SIMS Measurements of Oxygen in Heavily-Doped Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
R. J. Bleiler ◽  
R. S. Hockett ◽  
P. Chu ◽  
E. Strathman
Keyword(s):  
Integrated Circuit ◽  
Secondary Ion Mass Spectrometry ◽  
Signal To Noise Ratio ◽  
Free Carrier Absorption ◽  
Background Signal ◽  
Oxygen Precipitation ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped ◽  
Secondary Ion

ABSTRACTOxygen precipitation in CZ silicon is known to provide beneficial yield improvements in integrated circuit processing if the location and amount of precipitation can be properly controlled. The concentration of oxygen in the unprocessed silicon substrate is one of the most important variables to control for achieving these improvements. Fourier Transform Infrared Spectroscopy (FTIR) has successfully been used to measure [0] in silicon when the silicon resistivity is greater than about 0.1 Ω-cm. At lower resistivities typical of p+ and n+ substrates used for epi-wafers as free carrier absorption interferes with the FTIR measurement of bulk [0].This work will focus on how to quantitatively measure oxygen in heavily-doped silicon by Secondary Ion Mass Spectrometry (SIMS) with a high sample thruput, low background signal, and tight σ/x distribution. SIMS calibration is performed against FTIR-calibrated substrates with resistivity higher than 0.1Ωcm. Typical background signals as measured in FZ are a factor of 20 below signals in CZ, and the 160− signal in CZ is over 105 count/sec. resulting in an excellent signal-to-noise ratio for each single measurement. Typical thruput is 18 samples per day where each sample is analyzed four to five times to obtain a σ/x of 3% for an oxygen level of 15 ppma (ASTM F121−80).

Low-Temperature Infrared Absorption Measurement For Oxygen Concentration and Precipitates In Heavily-Doped Silicon Wafers

1996 ◽  
Vol 442 ◽  
Author(s):  
M. Koizuka ◽  
M. Inaba ◽  
H. Yamada-Kaneta
Keyword(s):  
Heat Treatment ◽  
Oxygen Concentration ◽  
Silicon Crystal ◽  
Ir Absorption ◽  
Interstitial Oxygen ◽  
Oxygen Precipitation ◽  
Precipitation Characteristics ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Absorption Technique

AbstractWe present a new IR absorption technique of measuring the dissolved interstitial oxygen concentration [Oi] and its reduction Δ [Oi] due to oxygen precipitation of the heavily-doped silicon crystal with doping level of about 1019 atoms/cm3. The method consists of the three steps: bonding the silicon wafer to a thick FZ silicon substrate by heat-treatment, thinning the wafer, and measuring the height of the 1136-cm−1 absorption peak of Oi at a temperature below 5 K. For a heavily doped wafer and the heavily doped substrate of an epitaxial wafer, we demonstrate examples of measuring the initial [Oi] and Δ [Oi] due to heat-treatment. Using this method, we investigate oxygen precipitation characteristics of the wafer heavily doped with boron. We found that the enhanced oxygen precipitation due to heavy boron-doping is expected if we perform preanneal at temperatures below 700°C.

scholarly journals Temperature Characteristics of a Contour Mode MEMS AlN Piezoelectric Ring Resonator on SOI Substrate

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 143
Author(s):  
Sitao Fei ◽  
Hao Ren
Keyword(s):  
Quality Factor ◽  
Bottom Electrode ◽  
Temperature Stability ◽  
Cryogenic Cooling ◽  
Silicon On Insulator ◽  
Temperature Hysteresis ◽  
Sensing Applications ◽  
Doped Silicon ◽  
Heavily Doped ◽  
Contour Mode

As a result of their IC compatibility, high acoustic velocity, and high thermal conductivity, aluminum nitride (AlN) resonators have been studied extensively over the past two decades, and widely implemented for radio frequency (RF) and sensing applications. However, the temperature coefficient of frequency (TCF) of AlN is −25 ppm/°C, which is high and limits its RF and sensing application. In contrast, the TCF of heavily doped silicon is significantly lower than the TCF of AlN. As a result, this study uses an AlN contour mode ring type resonator with heavily doped silicon as its bottom electrode in order to reduce the TCF of an AlN resonator. A simple microfabrication process based on Silicon-on-Insulator (SOI) is presented. A thickness ratio of 20:1 was chosen for the silicon bottom electrode to the AlN layer in order to make the TCF of the resonator mainly dependent upon heavily doped silicon. A cryogenic cooling test down to 77 K and heating test up to 400 K showed that the resonant frequency of the AlN resonator changed linearly with temperature change; the TCF was shown to be −9.1 ppm/°C. The temperature hysteresis characteristic of the resonator was also measured, and the AlN resonator showed excellent temperature stability. The quality factor versus temperature characteristic was also studied between 77 K and 400 K. It was found that lower temperature resulted in a higher quality factor, and the quality factor increased by 56.43%, from 1291.4 at 300 K to 2020.2 at 77 K.

Free carrier absorption in heavily doped silicon layers

2004 ◽  
Vol 84 (13) ◽  
pp. 2265-2267 ◽  
Author(s):  
Joerg Isenberg ◽  
Wilhelm Warta
Keyword(s):  
Free Carrier ◽  
Free Carrier Absorption ◽  
Doped Silicon ◽  
Carrier Absorption ◽  
Heavily Doped
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