Comparison of Arsenic and Boron Diffusion in Polycrystalline/Single‐Crystal Silicon Systems

1991 ◽  
Vol 138 (2) ◽  
pp. 545-549 ◽  
Author(s):  
K. Park ◽  
S. Batra ◽  
S. Banerjee ◽  
G. Lux ◽  
R. Manukonda
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Boron Diffusion ◽  
Crystal Silicon

Modeling of Boron Diffusion in Polysilicon-On-Silicon Layers

1992 ◽  
Vol 283 ◽  
Author(s):  
Akif Sultan ◽  
Shubneesh Batra ◽  
Melvyn Lobo ◽  
Keunhyung Park ◽  
Sanjay Banerjee
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Boron Diffusion ◽  
Crystal Silicon ◽  
Polysilicon Film ◽  
Wide Range ◽  
Polysilicon Layer ◽  
Single Crystal Silicon Substrate ◽  
Effective Diffusivities ◽  
Concentration Dependent Diffusivity

ABSTRACTIn the present study we have modeled the diffusion of boron in single crystal silicon from an ion-implanted polysilicon film deposited on a single crystal silicon substrate. Modeling has been done for both BF2 and boron implants in the polysilicon layer. A new phenomenological model for a diffusivity has been implemented in the PEPPER simulation program using an effective concentration-dependent diffusivity approach. The effective diffusivities of boron in single crystal silicon have been extracted using Boltzmann-Matano analysis. The modeling has been implemented for a wide range of furnace anneal conditions (800°C to 950°C, from 30 min. to 6 hours), and implant conditions (BF2 doses varied from 5×1015 to 2×10'16 cm-2 at 70 keV, boron dose of 5×1015 cm-2 at 20 keV).

Diffusion of Boron from Polysilicon at High Concentrations

1984 ◽  
Vol 36 ◽  
Author(s):  
R. F. Lever ◽  
B. Garben ◽  
C. M. Hsieh ◽  
W. A. Orr Arienzo
Keyword(s):  
Single Crystal ◽  
Doping Level ◽  
Crystal Surface ◽  
Single Crystal Silicon ◽  
Boron Diffusion ◽  
Crystal Silicon ◽  
High Boron ◽  
High Concentrations ◽  
Diffusion Simulation ◽  
Diffusion Profiles

ABSTRACTBoron diffusion profiles in single crystal silicon from highly doped polysilicon sources have been measured using SIMS after diffusion at 950°C for various times. These data have been analyzed to determine D(c) of boron in the single crystal. It is ncrmally assumed that at high boron concentrations D increases linearly with concentration. However, the shape of these profiles indicates that for a polysilicon source, this behavior does not appear to hold. Using Bolzmann-Matano analysis, D(c) was found to be insensitive to boron concentrations above 3.0E19 atoms/cm3. The results of this analysis were confirmed by using them as input to a diffusion simulation computer program and excellent agreement with the experimental profiles was obtained. The value of D was found to be unusually high at all concentrations in the single crystal and increased almost linearly with the doping level of the polysilicon. The effect of the furnace ramp-down cycle on the profiles near the crystal surface have also been investigated.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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