Synchrotron Radiation‐Excited Chemical Vapor Deposition of Silicon Nitride Films from a SiH4 +  NH 3 Gas Mixture

1991 ◽  
Vol 138 (11) ◽  
pp. 3412-3416 ◽  
Author(s):  
Hakaru Kyuragi ◽  
Tsuneo Urisu
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Synchrotron Radiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Mixture ◽  
Silicon Nitride Films

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

scholarly journals Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition

1995 ◽  
Vol 77 (12) ◽  
pp. 6534-6541 ◽  
Author(s):  
Sadanand V. Deshpande ◽  
Erdogan Gulari ◽  
Steven W. Brown ◽  
Stephen C. Rand
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Hot Filament

Preparation of Plasma Chemical Vapor Deposition Silicon Nitride Films from SiH2F2and NH3Source Gases

1991 ◽  
Vol 30 (Part 2, No. 4A) ◽  
pp. L619-L621 ◽  
Author(s):  
Nobuaki Watanabe ◽  
Mamoru Yoshida ◽  
Yi-Chao Jiang ◽  
Tutomu Nomoto ◽  
Ichimatsu Abiko
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Nitride Films

Low Temperature Silicon Nitride Films Deposited on 3D Topography by Hot Wire Chemical Vapor Deposition (HWCVD)

2007 ◽  
Vol 1036 ◽  
Author(s):  
Stephan Warnat ◽  
Markus Hoefer ◽  
Lothar Schaefer ◽  
Helmut Foell ◽  
Peter Lange
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electrical Breakdown ◽  
Morphological Structure ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Silicon Nitride Films ◽  
Deposition Processes ◽  
Silicon Vias

AbstractSilicon nitride films were deposited by hot-wire chemical vapor deposition processes (HW-CVD). The films reveal a morphological structure very similar to nitrides formed in low pressure CVD (LP-CVD) or plasma enhanced CVD (PE-CVD) processes. The electrical breakdown voltages, however, are much smaller for HW- than PE- or LPCVD films. The deposition in holes for isolation purpose in “through silicon vias” (TSV) technologies in combination with optical devices, which require very low temperatures (<200 °C), have been investigated. They reveal sufficiently good properties for the planned applications.

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