Characterization of silicon nitride films formed by synchrotron radiation-excited chemical vapor deposition

1996 ◽  
Vol 14 (5) ◽  
pp. 3305 ◽  
Author(s):  
Hakaru Kyuragi
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Synchrotron Radiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Nitride Films

Characterization of LPCVD of Silicon Nitride in a Rapid Thermal Processor

1989 ◽  
Vol 146 ◽  
Author(s):  
F. Scott Johnson ◽  
Roderick M. Miller ◽  
Mehmet C. Öztüirk ◽  
Jimmie J. Wortman
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Deposition Rates ◽  
Silicon Nitride Films ◽  
Tube Furnaces ◽  
Pressure Chemical

ABSTRACTLow pressure chemical vapor deposition of silicon nitride has been studied using a cold-walled, lamp heated, rapid thermal processor. Films were deposited at low presure using both silane and dichlorosilane, diluted in hydrogen and argon carrier gasses. The dichlorosilane and ammonia reaction was found to be unsuitable for use in the cold-walled system. Rapid thermal chemical vapor depositions using silane and ammonia did not result in “bullseye” non-uniformities reported for low presure depositions in conventional hot-walled tube furnaces. Ammonia to silane ratios of 120:1 were found to result in stoichiometric silicon nitride films. Deposition rates are well suited for dielectricapplications. Electrical characteristics are comparable to those of films deposited using APCVD and LPCVD methods.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

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