Reactive Ion Etching of Silicon Trenches Using  SF 6 /  O 2 Gas Mixtures

Tsengyou Syau; B. Jayant Baliga; Raymond W. Hamaker

doi:10.1149/1.2085371

Reactive Ion Etching of Silicon Trenches Using SF 6 / O 2 Gas Mixtures

Journal of The Electrochemical Society ◽

10.1149/1.2085371 ◽

1991 ◽

Vol 138 (10) ◽

pp. 3076-3081 ◽

Cited By ~ 49

Author(s):

Tsengyou Syau ◽

B. Jayant Baliga ◽

Raymond W. Hamaker

Keyword(s):

Reactive Ion Etching ◽

Gas Mixtures ◽

Ion Etching ◽

Silicon Trenches

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High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures

Applied Physics Letters ◽

10.1063/1.124986 ◽

1999 ◽

Vol 75 (15) ◽

pp. 2268-2270 ◽

Cited By ~ 108

Author(s):

F. A. Khan ◽

I. Adesida

Keyword(s):

Inductively Coupled Plasma ◽

Reactive Ion Etching ◽

Gas Mixtures ◽

High Rate ◽

Ion Etching ◽

Inductively Coupled

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Selective reactive ion etching on PECVD silicon nitride over amorphous silicon in CF4/H2 and nitrogen containing CF4/H2 plasma gas mixtures

Microelectronics Reliability ◽

10.1016/s0026-2714(97)87848-1 ◽

1997 ◽

Vol 37 (3) ◽

pp. 544-545

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Reactive Ion Etching ◽

Gas Mixtures ◽

Ion Etching

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Inductively Coupled Plasma Reactive Ion Etching of Ge-SiO2 and SiON Using C2F6 and NF3-Based Gas Mixtures

Solid State Phenomena - Advances in Nanomaterials and Processing ◽

10.4028/3-908451-31-0.503 ◽

2007 ◽

pp. 503-506

Author(s):

N.J. Kim ◽

S.Y. Lee ◽

G.K. Lee ◽

J.H. Moon ◽

Byung Teak Lee

Keyword(s):

Inductively Coupled Plasma ◽

Reactive Ion Etching ◽

Gas Mixtures ◽

Ion Etching ◽

Inductively Coupled

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Reactive ion etching induced damage with gas mixtures CHF3/O2 and SF6/O2

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.579445 ◽

1995 ◽

Vol 13 (1) ◽

pp. 67-72 ◽

Cited By ~ 20

Author(s):

W. Wu ◽

P. K. McLarty

Keyword(s):

Reactive Ion Etching ◽

Gas Mixtures ◽

Ion Etching

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A study on the reactive ion etching of SiC single crystals using inductively coupled plasma of SF6-based gas mixtures

Metals and Materials International ◽

10.1007/bf03027370 ◽

2004 ◽

Vol 10 (1) ◽

pp. 103-106 ◽

Cited By ~ 16

Author(s):

S. C. Ahn ◽

S. Y. Han ◽

J. L. Lee ◽

J. H. Moon ◽

B. T. Lee

Keyword(s):

Single Crystals ◽

Inductively Coupled Plasma ◽

Reactive Ion Etching ◽

Gas Mixtures ◽

Ion Etching ◽

Inductively Coupled

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Inductively coupled plasma reactive ion etching of sapphire using C2F6- and NF3-based gas mixtures

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2008.05.002 ◽

2008 ◽

Vol 11 (1) ◽

pp. 16-19 ◽

Cited By ~ 5

Author(s):

Dong-Jin Kang ◽

Il-Soo Kim ◽

Jong-Ha Moon ◽

Byung-Teak Lee

Keyword(s):

Inductively Coupled Plasma ◽

Reactive Ion Etching ◽

Gas Mixtures ◽

Ion Etching ◽

Inductively Coupled

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Reactive Ion Etching in SF 6 Gas Mixtures

Journal of The Electrochemical Society ◽

10.1149/1.2100400 ◽

1987 ◽

Vol 134 (1) ◽

pp. 165-175 ◽

Cited By ~ 32

Author(s):

R. Pinto ◽

K. V. Ramanathan ◽

R. S. Babu

Keyword(s):

Reactive Ion Etching ◽

Gas Mixtures ◽

Ion Etching

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Selective reactive ion etching of PECVD silicon nitride over amorphous silicon in and nitrogen containing plasma gas mixtures

Solid-State Electronics ◽

10.1016/0038-1101(95)00109-7 ◽

1996 ◽

Vol 39 (1) ◽

pp. 33-37 ◽

Cited By ~ 3

Author(s):

M.Jagadesh Kumar ◽

Savvas G. Chamberlain

Keyword(s):

Silicon Nitride ◽

Amorphous Silicon ◽

Reactive Ion Etching ◽

Gas Mixtures ◽

Ion Etching

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Reactive ion etching of via holes for GaAs HEMTs and MMICs using Cl/sub 2//BCl/sub 3//Ar gas mixtures

International Conference on Plasma Science (papers in summary form only received) ◽

10.1109/plasma.1995.531668 ◽

1995 ◽

Author(s):

K.J. Nordheden ◽

D.W. Ferguson ◽

P.M. Smith

Keyword(s):

Reactive Ion Etching ◽

Gas Mixtures ◽

Ion Etching ◽

Via Holes ◽

Ar Gas

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Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine-based reactive ion etching of silicon trenches

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584896 ◽

1990 ◽

Vol 8 (6) ◽

pp. 1199 ◽

Cited By ~ 90

Author(s):

G. S. Oehrlein

Keyword(s):

Reactive Ion Etching ◽

Ion Etching ◽

Sidewall Passivation ◽

Silicon Trenches

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