A study on the reactive ion etching of SiC single crystals using inductively coupled plasma of SF6-based gas mixtures

2004 ◽  
Vol 10 (1) ◽  
pp. 103-106 ◽  
Author(s):  
S. C. Ahn ◽  
S. Y. Han ◽  
J. L. Lee ◽  
J. H. Moon ◽  
B. T. Lee
Keyword(s):  
Single Crystals ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Gas Mixtures ◽  
Ion Etching ◽  
Inductively Coupled

Inductively Coupled Plasma Reactive Ion Etching of Ge-SiO2 and SiON Using C2F6 and NF3-Based Gas Mixtures

2007 ◽  
Vol 124-126 ◽  
pp. 503-506
Author(s):  
N.J. Kim ◽  
S.Y. Lee ◽  
G.K. Lee ◽  
J.H. Moon ◽  
Byung Teak Lee
Keyword(s):  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Gas Mixtures ◽  
Smooth Surfaces ◽  
Ion Etching ◽  
X Ray ◽  
Inductively Coupled ◽  
Silica Glasses

Inductively coupled plasma reactive ion etching of Ge doped silica glasses and SiON was investigated, using C2F6- and NF3-based gas mixtures. Mesas with smooth surfaces and vertical sidewalls were obtained, with a maximum etch rate of about 310nm/min in the case of C2F6 RIE of Ge-SiO2 and 280 nm/min in the case of SiON. The NF3 plasma yielded slightly higher etch rate, although sloped sidewalls were obtained. Results of the X-ray photoelectron spectroscopy showed little contamination on the etched surfaces.

Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

2013 ◽  
Vol 22 (10) ◽  
pp. 106802
Author(s):  
Bo Wang ◽  
Shi-Chen Su ◽  
Miao He ◽  
Hong Chen ◽  
Wen-Bo Wu ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled

scholarly journals Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics

2002 ◽  
Author(s):  
M. N. Palmisiano ◽  
G. M. Peake ◽  
R. J. Shul ◽  
C. I. Ashby ◽  
J. G. Cederberg ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled

Effect of the process parameters of inductively coupled plasma reactive ion etching on the fabrication of diamond nanotips

2014 ◽  
Vol 211 (10) ◽  
pp. 2343-2346 ◽  
Author(s):  
Hasan-al Mehedi ◽  
Vianney Mille ◽  
Jocelyn Achard ◽  
Ovidiu Brinza ◽  
Alix Gicquel
Keyword(s):  
Process Parameters ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled
Sign in / Sign up

Export Citation Format

Share Document