Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine-based reactive ion etching of silicon trenches

1990 ◽  
Vol 8 (6) ◽  
pp. 1199 ◽  
Author(s):  
G. S. Oehrlein
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Sidewall Passivation ◽  
Silicon Trenches

Reactive Ion Etching of Silicon Trenches Using  SF 6 /  O 2 Gas Mixtures

1991 ◽  
Vol 138 (10) ◽  
pp. 3076-3081 ◽  
Author(s):  
Tsengyou Syau ◽  
B. Jayant Baliga ◽  
Raymond W. Hamaker
Keyword(s):  
Reactive Ion Etching ◽  
Gas Mixtures ◽  
Ion Etching ◽  
Silicon Trenches

Magnetically enhanced reactive ion etching of submicron silicon trenches

1991 ◽  
Author(s):  
Kent Cooper ◽  
Bich-Yen Nguyen ◽  
Jung-Hui Lin ◽  
Bernard J. Roman ◽  
Phil J. Tobin ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Silicon Trenches

Reactive-Ion-Etching of 100nm Linewidth Tungsten Features Using SF6:H2 and a Cr-Liftoff Mask

1993 ◽  
Vol 324 ◽  
Author(s):  
Loretita M. Shirey ◽  
Kelly W. Foster ◽  
William Chu ◽  
John Kosakowski ◽  
Kee Woo Rhee ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Reactive Ion Etching ◽  
Processing Parameters ◽  
Critical Parameters ◽  
Ion Etching ◽  
Novel Method ◽  
End Point Detection ◽  
Sidewall Passivation ◽  
Gas Dilution ◽  
Point Detection

AbstractReactive ion etching of features down to 100 nm in linewidth in tungsten has been studied using an SF6 based chemistry. The studies were carried out in a PlasmaTherm 500 etcher operated at low pressure (2 mTorr) and power (100 mWatts/cm2). Key processing parameters have been identified to achieve the resolution and aspect ratio required for high contrast x-ray masks. The critical parameters include sample temperature, gas dilution and end point detection. However, even with all of these parameters optimized, additional sidewall passivation is required to obtain the necessary 6.5:1 aspect ratio. A novel method of achieving such passivation based on an intermittent etching process is described.

scholarly journals The black silicon method II:The effect of mask material and loading on the reactive ion etching of deep silicon trenches

1995 ◽  
Vol 27 (1-4) ◽  
pp. 475-480 ◽  
Author(s):  
Henri Jansen ◽  
Meint de Boer ◽  
Johannes Burger ◽  
Rob Legtenberg ◽  
Miko Elwenspoek
Keyword(s):  
Reactive Ion Etching ◽  
Black Silicon ◽  
Ion Etching ◽  
Mask Material ◽  
Silicon Trenches

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching

1989 ◽  
Vol 25 (15) ◽  
pp. 954 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
Y. Abe ◽  
H. Ogata
Keyword(s):  
Mass Transport ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Monolithically Integrated
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