Thermal Annealing Effects on the Mechanical Properties of Plasma‐Enhanced Chemical Vapor Deposited Silicon Oxide Films

1992 ◽  
Vol 139 (6) ◽  
pp. 1730-1735 ◽  
Author(s):  
H. ‐J. Schliwinski ◽  
U. Schnakenberg ◽  
W. Windbracke ◽  
H. Neff ◽  
P. Lange
Keyword(s):  
Mechanical Properties ◽  
Thermal Annealing ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Annealing Effects

Microbridge Nanoindentation Testing of Plasma-Enhanced Chemical Vapor Deposited Silicon Oxide Films

2004 ◽  
Vol 841 ◽  
Author(s):  
Zhiqiang Cao ◽  
Tong-Yi Zhang ◽  
Xin Zhang
Keyword(s):  
Residual Stresses ◽  
Thermal Annealing ◽  
Microelectromechanical Systems ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Residual Deflection ◽  
Compressive Stresses ◽  
Stress Changes ◽  
Chemical Vapor Deposited

ABSTRACTPlasma-enhanced chemical vapor deposited (PECVD) silane-based oxides (SiOx) have been widely used in both microelectronics and MEMS (MicroElectroMechanical Systems) to form electrical and/or mechanical components. In this paper, a novel nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young's modulus of PECVD SiOx films. Our theoretical model employed a closed formula of deflection vs. load, considering both substrate deformation and the residual stresses in the thin films. In particular, the non-negligible residual deflection caused by excessive compressive stresses was taken into account. Freestanding microbridges made of PECVD SiOx films were fabricated using bulk micromachining techniques. To simulate the thermal processing in device fabrication, these microbridges were subjected to rapid thermal annealing (RTA) up to 800°C. A microstructure-based mechanism was applied to explain the experimental results of the residual stress changes in PECVD SiOx films after thermal annealing.

Rapid thermal annealing effects on the properties of plasma‐enhanced chemical vapor deposited tungsten films

1991 ◽  
Vol 70 (4) ◽  
pp. 2366-2369 ◽  
Author(s):  
Jong‐Sung Hong ◽  
Yong Tae Kim ◽  
Suk‐Ki Min ◽  
Tae Won Kang ◽  
Chi Yhou Hong
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Annealing Effects
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