Copper Film Growth by Chemical Vapor Deposition: Electrical and Optical Measurements in Real Time, and Studies of Morphology

1993 ◽  
Vol 140 (3) ◽  
pp. 789-796 ◽  
Author(s):  
B. Lecohier ◽  
B. Calpini ◽  
J. ‐M. Philippoz ◽  
H. van den Bergh ◽  
D. Laub ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Real Time ◽  
Vapor Deposition ◽  
Film Growth ◽  
Copper Film ◽  
Chemical Vapor ◽  
Optical Measurements

Chemical Vapor Deposition of Highly Transparent and Conductive Boron Doped Zinc Oxide Thin Films

1992 ◽  
Vol 242 ◽  
Author(s):  
Jianhua Hu ◽  
Roy G. Gordon
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Optical Measurements ◽  
Visible Absorption ◽  
Boron Doped ◽  
Pressure Chemical ◽  
Crystallite Sizes

ABSTRACTBoron doped zinc oxide films have been successfully deposited from a gas mixture of 0.05% diethyl zinc, 2.3% ethanol and various diborane concentrations in the temperature range 300°C to 430°C in an atmospheric pressure chemical vapor deposition reactor. The dopant diborane was found to decrease the film growth rate. The crystallite sizes of doped films were smaller than those of undoped films. Hall coefficient and resistance measurements at room temperatures gave conductivities between 250 and 1700 Ω-1, electron densities between 1.4×1020 and 6.7×1020 cm-3, and mobilities between 7 and 23 cm2/V-s. Optical measurements showed that a film with a sheet resistance of 8.8 Ω/square has an average visible absorption of about 8% and maximum infrared reflectance close to 85%. The ratio of conductivity to absorption coefficient is between 0.05 Ω-1 and 0.55 Ω-1. The band gap of doped film was widened and followed the Burstein-Moss relation.

Chemical Vapor Deposition of Copper from an Organometallic Source

1990 ◽  
Vol 181 ◽  
Author(s):  
David B. Beach ◽  
William F. Kane ◽  
Francoise K. Legoues ◽  
Christopher J. Knors
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Copper Film ◽  
Chemical Vapor ◽  
Auger Spectroscopy ◽  
Copper Films ◽  
Phosphine Complexes ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTHigh purity copper has been deposited from trialkyl phosphine complexes of cyclopentadienyl and methylcyclopentadienyl copper(I) by thermal chemical vapor deposition (CVD). Films as thick as 4.4 μm have been deposited at growth rates of up to 2000 Å/min with resistivites typically 2.0 μΩ cm, just slightly higher than bulk copper. Depositions were carried out at substrate temperatures between 150 and 220 °C on a variety of substrates including Si, SiO2, polyimide, and Cr/Cu. At low substrate temperatures, copper film growth appears to show some selectivity for transition metal surfaces. An activation energy of 18 kcal/mole has been measured for film growth on Cu seeded substrates. CVD copper films have been characterized by Auger spectroscopy which showed that carbon and oxygen levels are below the limits of detection. Transmission electron microscopy revealed that the copper grain size was ∼0.6μm and the grain boundaries are free of precipitates. Films show good conformality.

scholarly journals Real-time in-situ Investigation of III-V Nanowire Growth using Custom-designed Hybrid Chemical Vapor Deposition-TEM

2017 ◽  
Vol 23 (S1) ◽  
pp. 1716-1717 ◽  
Author(s):  
Kimberly Dick Thelander ◽  
L. Reine Wallenberg ◽  
Axel R. Persson ◽  
Marcus Tornberg ◽  
Daniel Jacobsson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Real Time ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanowire Growth ◽  
In Situ Investigation

Real-Time Diagnosis of Nano-Sized Contaminant Particles Generated in TiN Metal Organic Chemical Vapor Deposition

2009 ◽  
Vol 2 ◽  
pp. 035501 ◽  
Author(s):  
Jeonggil Na ◽  
Taesung Kim ◽  
Jae-Boong Choi ◽  
Ju-Young Yun ◽  
Yong-Hyeon Shin ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Real Time ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Tin Metal ◽  
Organic Chemical Vapor Deposition ◽  
Time Diagnosis

Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

2007 ◽  
Vol 22 (5) ◽  
pp. 1275-1280 ◽  
Author(s):  
Y. Morikawa ◽  
M. Hirai ◽  
A. Ohi ◽  
M. Kusaka ◽  
M. Iwami
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Single Molecule ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Sic Film

We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in which we decrease the substrate temperature for a few minutes at a suitable stage of film growth. It was expected that, during the interval process, stabilization such as desorption of nonreacted precursors and lateral diffusion of species produced at the initial stage of film growth would occur. From the results, it appears that the interval process using a substrate temperature of 800 °C effectively suppresses polycrystallization of 3C–SiC growth on the Si(100) surface

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