Chemical Vapor Deposition of Copper from an Organometallic Source

1990 ◽  
Vol 181 ◽  
Author(s):  
David B. Beach ◽  
William F. Kane ◽  
Francoise K. Legoues ◽  
Christopher J. Knors
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Copper Film ◽  
Chemical Vapor ◽  
Auger Spectroscopy ◽  
Copper Films ◽  
Phosphine Complexes ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTHigh purity copper has been deposited from trialkyl phosphine complexes of cyclopentadienyl and methylcyclopentadienyl copper(I) by thermal chemical vapor deposition (CVD). Films as thick as 4.4 μm have been deposited at growth rates of up to 2000 Å/min with resistivites typically 2.0 μΩ cm, just slightly higher than bulk copper. Depositions were carried out at substrate temperatures between 150 and 220 °C on a variety of substrates including Si, SiO2, polyimide, and Cr/Cu. At low substrate temperatures, copper film growth appears to show some selectivity for transition metal surfaces. An activation energy of 18 kcal/mole has been measured for film growth on Cu seeded substrates. CVD copper films have been characterized by Auger spectroscopy which showed that carbon and oxygen levels are below the limits of detection. Transmission electron microscopy revealed that the copper grain size was ∼0.6μm and the grain boundaries are free of precipitates. Films show good conformality.

Copper Film Growth by Chemical Vapor Deposition: Electrical and Optical Measurements in Real Time, and Studies of Morphology

1993 ◽  
Vol 140 (3) ◽  
pp. 789-796 ◽  
Author(s):  
B. Lecohier ◽  
B. Calpini ◽  
J. ‐M. Philippoz ◽  
H. van den Bergh ◽  
D. Laub ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Real Time ◽  
Vapor Deposition ◽  
Film Growth ◽  
Copper Film ◽  
Chemical Vapor ◽  
Optical Measurements

RBS/Chainneling and Ten Analysis of Heteroepitaxial Ge Films on GaAs Crown by Remote Plasma Enhanced Chemical Vapor Deposition

1987 ◽  
Vol 102 ◽  
Author(s):  
N.R. Parikh ◽  
F V Hattangady ◽  
J.B. Posthill ◽  
M.L. King ◽  
R.A. Rudder ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Gaas Crystal ◽  
Remote Plasma ◽  
Transmission Electron ◽  
Crystal Films ◽  
Substrate Temperatures ◽  
Minimum Yield

ABSTRACTWe have deposited thin Ge films on GaAs(111) crystals over a temperature range of 250-400° C by Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD). Rutherford Backscattering (RBS)/channelinf analysis of these heteroepitaxial films were carried out using 2.07 MeV He ions channeled along the <111> axis. RBS/channeling analysis showed that the best Ce films were grown at a substrate temperature of 300° C. The minimum yield for <111> channeling on films deposited at 300° C was 0.08, slightly greater than that of the GaAs crystal. Films grown at temperatures below 300° C showed poor epitaxy. No channeling was observed for the film grown at 250° C. Films grown at substrate temperatures above 350° C showed high dechanneling near the interface and poor epitaxy indicating films are highly defective. The RBS/channeling results are correlated with microstructural characterization using transmission electron microscopy of these films.

Gas-phase nucleation during chemical vapor deposition of copper films and its effect on the resistivity of deposited films

1999 ◽  
Vol 14 (11) ◽  
pp. 4345-4350
Author(s):  
I. A. Rauf ◽  
R. Siemsen ◽  
M. Grunwell ◽  
R. F. Egerton ◽  
M. Sayer
Keyword(s):  
Electrical Resistivity ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Copper Films ◽  
Pressure Chemical ◽  
Phase Nucleation ◽  
Substrate Temperatures ◽  
Deposited Films

A study of the electrical resistivity and microstructure of thin copper films deposited by low-pressure chemical vapor deposition from copper (I) hexafluoroacetylacetonate vinyltrimethylsilane (Cupra Select) was undertaken. Evidence for the nucleation of solid copper in the gas phase at substrate temperatures of about 250 °C is presented. A process to predict the effects of gas-phase nucleation and growth on the electrical resistivity of the resulting film is discussed.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

Copper Chemical Vapor Deposition using a Novel Cu(II) Precursor for Contact Via Filling Process

2007 ◽  
Vol 990 ◽  
Author(s):  
Hideaki Zama ◽  
Yuuji Nishimura ◽  
Michiyo Yago ◽  
Mikio Watanabe
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hydrogen Reduction ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Molar Ratio ◽  
Cu Films ◽  
Pure Cu ◽  
Substrate Temperatures ◽  
Advanced Generation

ABSTRACTChemical vapor deposition (CVD) of copper using both a novel Cu(II) β-diketonate source and hydrogen reduction process was studied to fill contact vias with the smallest diameter in the 32nm and more advanced generation chip. Pure Cu films were grown under the condition with the product of hydrogen partial pressure and H2/Cu source molar ratio being over 1,000,000. We succeeded in filling the 40-nm-diameter contact vias by optimizing the growth condition of the Cu-CVD in both substrate temperatures and reaction pressures.

Sign in / Sign up

Export Citation Format

Share Document