Reaction and Film Properties of Selective Titanium Silicide Low‐Pressure Chemical Vapor Deposition

1994 ◽  
Vol 141 (7) ◽  
pp. 1879-1885 ◽  
Author(s):  
Kunio Saito ◽  
Yasuhiro Higashi ◽  
Takao Amazawa ◽  
Yoshinobu Arita
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Titanium Silicide ◽  
Film Properties ◽  
Pressure Chemical

Titanium Silicide Films Deposited by Low Pressure Chemical Vapor Deposition

1984 ◽  
Vol 37 ◽  
Author(s):  
Prabha K. Tedrow ◽  
Vida Ilderem ◽  
R. Reif
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Titanium Silicide ◽  
System A ◽  
Turbomolecular Pump ◽  
Pressure Chemical ◽  
Free Environment ◽  
Infrared Lamps

AbstractSmooth titanium silicide films have been deposited using a Low Pressure Chemical Vapor Deposition (LPCVD) process. A system has been designed and built for the LPCVD of titanium silicide. It is a cold wall reactor with the wafer being heated externally by infrared lamps. Sequential deposition of polycrystalline silicon (polysilicon) and titanium silicide films, and in-situ annealing of these films, if required, can be performed in this system. A turbomolecular pump is used to provide a contaminant free environment with a base pressure of <10−7 torr. SiH4 and TiCl4 are used as silicon and titanium sources, respectively.Tithnium silicide films with resistivities ranging from 22 to 39 μΩ-cm have been obtained. At low deposition rates, these films have surface roughnesses ranging from 50 to 250 Å. From X-ray diffractometry, it was determined that the as-deposited titanium silicide films were polycrystalline, and TiSi2 was the predominant phase. Si/Ti ratios of 1.8 to 2.3 were obtained frog Rutherford Backscattering Spectroscopy (RBS). Auger analyses did not show any impurities such as oxygen, carbon or chlorine in these films.

Selective Titanium Silicide Deposition Using SiH4 ‐ TiCl4 ‐  H 2 in Low‐Pressure Chemical Vapor Deposition and Film Characterization

1998 ◽  
Vol 145 (11) ◽  
pp. 3941-3950 ◽  
Author(s):  
Jeong Soo Byun ◽  
Sang Jun Choi ◽  
Jae Jeong Kim ◽  
Jin‐Tae Choi ◽  
Johanes Swenberg ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Titanium Silicide ◽  
Pressure Chemical

Rapid Growth Kinetics, Mechanical Properties and Thermal Stability of Siox Thin Films Grown by Rapid Thermal Low Pressure Chemical Vapor Deposition

1991 ◽  
Vol 240 ◽  
Author(s):  
A. Feingold ◽  
A. Katz ◽  
S. J. Pearton ◽  
U. K. Chakrabartl ◽  
K. S. Jones
Keyword(s):  
Thermal Stability ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Film Properties ◽  
Pressure Chemical ◽  
Ar Gas ◽  
Wet Etch ◽  
Inp Substrates

ABSTRACTHigh quality SiOx films were deposited onto InP substrates in the temperature range of 350 to 550°C and pressure range of 5 to 15 Torr. Depositions were made by means of rapid thermal low pressure chemical vapor deposition (RT-LPCVD) using oxygen (O2) and 2% diluted silane (SiH4) in argon (Ar) gas sources, with O2:SiH4 gas ratio of 5:1 to 50:1. High deposition rates of 15–50 nm/sec were obtained, providing uniform SiOx layers, with low stresses of −5×109 to −2×109 dyne-cm−2, and thermal stability on post deposition temperatures up to 1000°C. The SiOx films had refractive indexes between 1.44 and 1.50, densities of 2.25 to 2.37grcm−3 and exhibited wet etch rates of 0.2 to 0.8 nmsec.−1 through standard p-etch process. The influence of the various process parameters on the SiOx film properties was examined.

Low pressure chemical vapor deposition of titanium silicide

1985 ◽  
Vol 46 (2) ◽  
pp. 189-191 ◽  
Author(s):  
P. K. Tedrow ◽  
V. Ilderem ◽  
R. Reif
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Titanium Silicide ◽  
Pressure Chemical
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