Low pressure chemical vapor deposition of titanium silicide

1985 ◽  
Vol 46 (2) ◽  
pp. 189-191 ◽  
Author(s):  
P. K. Tedrow ◽  
V. Ilderem ◽  
R. Reif
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Titanium Silicide ◽  
Pressure Chemical

Titanium Silicide Films Deposited by Low Pressure Chemical Vapor Deposition

1984 ◽  
Vol 37 ◽  
Author(s):  
Prabha K. Tedrow ◽  
Vida Ilderem ◽  
R. Reif
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Titanium Silicide ◽  
System A ◽  
Turbomolecular Pump ◽  
Pressure Chemical ◽  
Free Environment ◽  
Infrared Lamps

AbstractSmooth titanium silicide films have been deposited using a Low Pressure Chemical Vapor Deposition (LPCVD) process. A system has been designed and built for the LPCVD of titanium silicide. It is a cold wall reactor with the wafer being heated externally by infrared lamps. Sequential deposition of polycrystalline silicon (polysilicon) and titanium silicide films, and in-situ annealing of these films, if required, can be performed in this system. A turbomolecular pump is used to provide a contaminant free environment with a base pressure of <10−7 torr. SiH4 and TiCl4 are used as silicon and titanium sources, respectively.Tithnium silicide films with resistivities ranging from 22 to 39 μΩ-cm have been obtained. At low deposition rates, these films have surface roughnesses ranging from 50 to 250 Å. From X-ray diffractometry, it was determined that the as-deposited titanium silicide films were polycrystalline, and TiSi2 was the predominant phase. Si/Ti ratios of 1.8 to 2.3 were obtained frog Rutherford Backscattering Spectroscopy (RBS). Auger analyses did not show any impurities such as oxygen, carbon or chlorine in these films.

Selective Titanium Silicide Deposition Using SiH4 ‐ TiCl4 ‐  H 2 in Low‐Pressure Chemical Vapor Deposition and Film Characterization

1998 ◽  
Vol 145 (11) ◽  
pp. 3941-3950 ◽  
Author(s):  
Jeong Soo Byun ◽  
Sang Jun Choi ◽  
Jae Jeong Kim ◽  
Jin‐Tae Choi ◽  
Johanes Swenberg ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Titanium Silicide ◽  
Pressure Chemical

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection
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