Inversion layer formation in organic field-effect devices

Th. Lindner; G. Paasch

doi:10.1063/1.2776235

Inversion layer formation in organic field-effect devices

Journal of Applied Physics ◽

10.1063/1.2776235 ◽

2007 ◽

Vol 102 (5) ◽

pp. 054514 ◽

Cited By ~ 12

Author(s):

Th. Lindner ◽

G. Paasch

Keyword(s):

Field Effect ◽

Inversion Layer ◽

Layer Formation ◽

Field Effect Devices

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Photogenerated minority carrier trapping and inversion layer formation in polymer field-effect structures

IEEE Transactions on Dielectrics and Electrical Insulation ◽

10.1109/tdei.2006.1714935 ◽

2006 ◽

Vol 13 (5) ◽

pp. 1093-1100 ◽

Cited By ~ 1

Author(s):

O. Fernandez ◽

D.M. Taylor ◽

J.A. Drysdale ◽

D.M. Ellis

Keyword(s):

Field Effect ◽

Minority Carrier ◽

Inversion Layer ◽

Layer Formation ◽

Carrier Trapping ◽

And Inversion

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Photogenerated minority carrier trapping and inversion layer formation in polymer field-effect structures

IEEE Transactions on Dielectrics and Electrical Insulation ◽

10.1109/tdei.2006.247837 ◽

2006 ◽

Vol 13 (5) ◽

pp. 1093-1100 ◽

Cited By ~ 4

Author(s):

Fernandez ◽

Taylor ◽

Drysdale ◽

Ellis

Keyword(s):

Field Effect ◽

Minority Carrier ◽

Inversion Layer ◽

Layer Formation ◽

Carrier Trapping ◽

And Inversion

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Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon

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Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

Canadian Journal of Physics ◽

10.1139/p87-159 ◽

1987 ◽

Vol 65 (8) ◽

pp. 995-998

Author(s):

N. G. Tarr

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Inversion Layer ◽

Potential Drop ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Analytic Approximation ◽

Effect Transistor ◽

Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

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Label-free Electrostatic Detection of DNA Amplification by PCR Using Capacitive Field-effect Devices

Procedia Engineering ◽

10.1016/j.proeng.2016.11.512 ◽

2016 ◽

Vol 168 ◽

pp. 514-517 ◽

Cited By ~ 2

Author(s):

A. Poghossian ◽

T.S. Bronder ◽

S. Scheja ◽

C. Wu ◽

T. Weinand ◽

...

Keyword(s):

Field Effect ◽

Dna Amplification ◽

Label Free ◽

Field Effect Devices

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The influence of mass transport processes on the response to gas mixtures of field-effect devices with large-area catalytic metal gates

Journal of Applied Physics ◽

10.1063/1.370780 ◽

1999 ◽

Vol 86 (1) ◽

pp. 657-663 ◽

Cited By ~ 3

Author(s):

M. Johansson ◽

L.-G. Ekedahl ◽

I. Lundström

Keyword(s):

Mass Transport ◽

Field Effect ◽

Gas Mixtures ◽

Transport Processes ◽

Large Area ◽

Metal Gates ◽

Field Effect Devices ◽

Catalytic Metal

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Mos digital‐to‐analog converter employing scaled field effect devices

The Journal of the Acoustical Society of America ◽

10.1121/1.385491 ◽

1981 ◽

Vol 69 (3) ◽

pp. 889-889

Author(s):

Ajay K. Puri ◽

Michael J. Caruso ◽

Stanley M. Dennison ◽

Jay Brown

Keyword(s):

Field Effect ◽

Digital To Analog Converter ◽

Analog Converter ◽

Field Effect Devices ◽

Digital To Analog

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Session 27 Solid state devices—Silicon field effect devices

10.1109/iedm.1982.190373 ◽

1982 ◽

Author(s):

C.L. Wilson ◽

H.N. Yu

Keyword(s):

Solid State ◽

Field Effect ◽

Solid State Devices ◽

Field Effect Devices

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Field Effect Devices Based on SrTiO3 Gate Dielectrics for the Investigation of Charge Carrier Mobility in Macromolecular Films

Macromolecular Symposia ◽

10.1002/masy.200650201 ◽

2006 ◽

Vol 234 (1) ◽

pp. 1-6 ◽

Cited By ~ 3

Author(s):

Antonio Cassinese ◽

Mario Barra ◽

Mariano Biasiucci ◽

Pasquale D'Angelo

Keyword(s):

Charge Carrier ◽

Field Effect ◽

Carrier Mobility ◽

Gate Dielectrics ◽

Charge Carrier Mobility ◽

Field Effect Devices

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Effect of magnetic quantization on the surface capacitance of MOS field-effect devices

phys stat sol (a) ◽

10.1002/pssa.2210580153 ◽

1980 ◽

Vol 58 (1) ◽

pp. K51-K54 ◽

Cited By ~ 4

Author(s):

D. Roy Choudhury ◽

A. K. Chowdhury ◽

A. N. Chakravarti ◽

B. R. Nag

Keyword(s):

Field Effect ◽

Magnetic Quantization ◽

Field Effect Devices

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Inversion layer formation in organic field-effect devices

Photogenerated minority carrier trapping and inversion layer formation in polymer field-effect structures

Photogenerated minority carrier trapping and inversion layer formation in polymer field-effect structures

Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

Label-free Electrostatic Detection of DNA Amplification by PCR Using Capacitive Field-effect Devices

The influence of mass transport processes on the response to gas mixtures of field-effect devices with large-area catalytic metal gates

Mos digital‐to‐analog converter employing scaled field effect devices

Session 27 Solid state devices&#8212;Silicon field effect devices

Field Effect Devices Based on SrTiO3 Gate Dielectrics for the Investigation of Charge Carrier Mobility in Macromolecular Films

Effect of magnetic quantization on the surface capacitance of MOS field-effect devices

Session 27 Solid state devices—Silicon field effect devices