Electron Beam Induced Current Investigations of Transition Metal Impurities at Extended Defects in Silicon

1995 ◽  
Vol 142 (12) ◽  
pp. 4298-4304 ◽  
Author(s):  
P. R. Wilshaw ◽  
T. S. Fell
Keyword(s):  
Electron Beam ◽  
Transition Metal ◽  
Extended Defects ◽  
Induced Current ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Electron Beam Induced Current

scholarly journals Study of Low Voltage Prebreakdown Sites in Multicrystalline Si Based Cells by the LBIC, EL, and EDS Methods

2017 ◽  
Vol 2017 ◽  
pp. 1-5 ◽  
Author(s):  
V. I. Orlov ◽  
E. B. Yakimov ◽  
E. P. Magomedbekov ◽  
A. B. Danilin
Keyword(s):  
Electron Beam ◽  
Laser Beam ◽  
Reverse Bias ◽  
Low Voltage ◽  
Depletion Region ◽  
Extended Defects ◽  
Induced Current ◽  
X Ray ◽  
Si Solar Cells ◽  
Electron Beam Induced Current

Breakdown sites in multicrystalline Si solar cells have been studied by reverse-bias electroluminescence, electron beam induced current (EBIC) and laser beam induced current (LBIC), and Energy Dispersive X-Ray Spectroscopy methods. In the breakdown sites revealed by EL at small reverse bias (~5 V), the enhanced aluminum and oxygen concentration is revealed. Such breakdowns can be located inside the depletion region because they are not revealed by the EBIC or LBIC methods. Breakdowns revealed by EL at larger bias correlate well with extended defects in the EBIC and LBIC images.

Transition-Metal Impurities Removal from Metallurgical Grade Silicon by Electron Beam Injection

2011 ◽  
Vol 675-677 ◽  
pp. 105-108
Author(s):  
Rui Xun Zou ◽  
Da Chuan Jiang ◽  
Wei Dong ◽  
Zheng Gu ◽  
Yi Tan
Keyword(s):  
Electron Beam ◽  
Transition Metal ◽  
Removal Rate ◽  
Silicon Powder ◽  
Sio2 Film ◽  
Metallurgical Grade Silicon ◽  
Beam Injection ◽  
Metal Impurities ◽  
Transition Metal Impurities ◽  
Grade Silicon

The electron beam injection (EBI) process involves offering electrons around silicon powder, whose surface was oxidized, and subsequently the powder is washed by HF acid so as to remove the SiO2 film. The new electron beam injection process, in which micro electric filed formed between Si and SiO2 film will accelerate impurities diffusion from Si to SiO2 film, was developed and applied to eliminate the transition-metal impurities of MG-Si. It is proved to be effective to remove transition-metal impurities from metallurgical grade silicon (MG-Si). By applying the electron beam injection method, the removal rate of 10% to 59% was achieved during the refining process. The efficiency of impurity removal originates from two aspects: the impurity concentration gradient on both sides of Si/SiO2 interface; the micro electric field formed from Si to SiO2 film. A further increase in the removal rate can be realized by controlling the processing parameters.

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

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