Soft Cleaning by In Vacuo Ultraviolet Radiation Combined with Molecular Hydrogen Gas before Molecular Beam Epitaxial Layer Growth

1995 ◽  
Vol 142 (1) ◽  
pp. 191-195 ◽  
Author(s):  
G. Lippert ◽  
H. J. Thieme ◽  
H. J. Osten
Keyword(s):  
Ultraviolet Radiation ◽  
Epitaxial Layer ◽  
Molecular Hydrogen ◽  
Molecular Beam ◽  
Layer Growth ◽  
Hydrogen Gas ◽  
Molecular Beam Epitaxial

Formation of $\bf ZnGa_{2}Se_{4}$ Epitaxial Layer during Molecular Beam Epitaxial Growth of $\bf Ga_{2}Se_{3}$ on ZnSe

1994 ◽  
Vol 33 (Part 2, No. 8A) ◽  
pp. L1059-L1062 ◽  
Author(s):  
Tamotsu Okamoto ◽  
Toshihiko Miyashita ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Investigation of GaSb/GaAs Quantum Dots Formation on Ge (001) Substrate and Effect of Anti-Phase Domains

MRS Advances ◽  
2016 ◽  
Vol 1 (23) ◽  
pp. 1729-1734 ◽  
Author(s):  
Zon ◽  
Thanavorn Poempool ◽  
Suwit Kiravittaya ◽  
Suwat Sopitpan ◽  
Supachok Thainoi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Sample Surface ◽  
Layer Growth ◽  
Group Iv ◽  
Optimum Conditions ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

ABSTRACTThe effects of GaAs anti-phase domains (APDs) on the growth of GaSb quantum dots (QDs) are investigated by molecular beam epitaxial growth of GaAs on Ge (001) substrate. Ge is a group-IV element and GaAs is a polar III-V compound semiconductor. Due to polar/non polar interface, GaAs APDs are formed. Initial formation of APD relates to a non-uniform growth of high index GaAs surfaces. However, due to high sticking coefficient of Sb atoms at low substrate growth temperature, GaSb QDs can be formed on the whole surface of the sample without any effects from APD boundary. The buffer layer growth temperature is one of the key roles to control the APDs formation. Therefore we tried to adjust the optimum conditions such as buffer layer thickness and growth temperature to get nearly flat sample surface with large APDs for high QDs density (∼ 8×109 dots/cm2). Low-temperature photoluminescence is conducted and GaSb QDs peak is observed at the energy range of 1.0 eV-1.3 eV.

X-ray reflectivity measurement of δ-doped erbium profile in silicon molecular-beam epitaxial layer

1999 ◽  
Vol 59 (16) ◽  
pp. 10697-10700 ◽  
Author(s):  
Jun Wan ◽  
Z. M. Jiang ◽  
D. W. Gong ◽  
Y. L. Fan ◽  
C. Sheng ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Molecular Beam ◽  
Reflectivity Measurement ◽  
X Ray ◽  
Molecular Beam Epitaxial
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