scholarly journals ALD Al2O3 gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT

RSC Advances ◽  
2020 ◽  
Vol 10 (17) ◽  
pp. 9902-9906 ◽  
Author(s):  
Kuan-Yu Chen ◽  
Chih-Chiang Yang ◽  
Chun-Yuan Huang ◽  
Yan-Kuin Su
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Trap Density ◽  
Oxide Thin Film ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Indium Gallium ◽  
Al2o3 Gate Dielectric

The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method.

Effects of interface trap density on the electrical performance of amorphous InSnZnO thin-film transistor

2015 ◽  
Vol 36 (2) ◽  
pp. 024007 ◽  
Author(s):  
Yongye Liang ◽  
Jang Kyungsoo ◽  
S. Velumani ◽  
Phu Thi Nguyen Cam ◽  
Yi Junsin
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Trap Density ◽  
Electrical Performance ◽  
Interface Trap Density ◽  
Interface Trap

scholarly journals Indium Gallium Oxide Thin Film Transistor for Two-Stage UV Sensor Application

2019 ◽  
Vol 8 (7) ◽  
pp. Q3140-Q3143 ◽  
Author(s):  
Wei-Lun Huang ◽  
Ming-Hung Hsu ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang ◽  
Yu-Zung Chiou
Keyword(s):  
Thin Film ◽  
Gallium Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Two Stage ◽  
Sensor Application ◽  
Uv Sensor ◽  
Indium Gallium
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