scholarly journals Barrier Properties of Very Thin Ta and TaN Layers Against Copper Diffusion

1998 ◽  
Vol 145 (7) ◽  
pp. 2538-2545 ◽  
Author(s):  
M. T. Wang ◽  
Y. C. Lin ◽  
M. C. Chen
Keyword(s):  
Barrier Properties ◽  
Copper Diffusion

Modeling Copper Diffusion in Silicon Oxide, Nitride, and Carbide

2002 ◽  
Vol 716 ◽  
Author(s):  
Vladimir Zubkov ◽  
Joseph Han ◽  
Grace Sun ◽  
Charles Musgrave ◽  
Sheldon Aronowitz
Keyword(s):  
Density Functional ◽  
Silicon Oxide ◽  
Copper Ions ◽  
Barrier Properties ◽  
Amorphous Oxides ◽  
Functional Theory ◽  
Copper Diffusion ◽  
The Difference ◽  
Stable Ring ◽  
Diffusion Properties

AbstractDensity functional theory was applied to simulate copper diffusion in silicon oxide, nitride, and carbide (SiOx, SiNx, SiCx). Because copper drift into oxide is significantly enhanced by negative bias, copper ions are the active diffusing species. Clusters and, in some cases supercells, modeling various ring configurations of the amorphous networks of silicon oxide, nitride, and carbide were employed. Interactions of both neutral copper and its cation, Cu+, with the network were explored. Calculations revealed a strong binding of Cu+ to SiOx, SiCx, and SiNx in contrast with neutral Cu. The Cu+ attraction to carbide clusters is significantly lower than to SiOx and SiNx, explaining the effective barrier properties of SiCx. The estimated lower bounds for activation energies for Cu+ hops between stable ring clusters of SiOx and SiNx are similar. This implies that the difference in Cu diffusion properties between oxides and nitrides is likely due to a higher percentage of large rings in amorphous oxides compared with nitrides. An approach to increasing the resistance of oxides to Cu+ diffusion is suggested.

Copper diffusion barrier properties of CVD boron carbo-nitride

2005 ◽  
Vol 23 (2) ◽  
pp. 463 ◽  
Author(s):  
E. R. Engbrecht ◽  
Y.-M. Sun ◽  
K. H. Junker ◽  
J. M. White ◽  
J. G. Ekerdt
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Copper Diffusion

Fabrication of Organic Thin Films for Copper Diffusion Barrier Layers Using Molecular Layer Deposition

2010 ◽  
Vol 1249 ◽  
Author(s):  
Stacey Bent ◽  
Paul William Loscutoff ◽  
Scott Clendenning
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Molecular Layer ◽  
Organic Thin Films ◽  
Barrier Properties ◽  
Diffusion Barriers ◽  
Molecular Layer Deposition ◽  
Copper Diffusion ◽  
Barrier Layers ◽  
Layer Deposition

AbstractDevice scaling predicts that copper barrier layers of under 3 nm in thickness will soon be needed in back-end processing for integrated circuits, motivating the development of new barrier layer materials. In this work, nanoscale organic thin films for use as possible copper diffusion barrier layers are deposited by molecular layer deposition (MLD) utilizing a series of self-limiting reactions of organic molecules. MLD can be used to tailor film properties to optimize desirable barrier properties, including density, copper surface adhesion, thermal stability, and low copper diffusion. Three systems are examined as copper diffusion barriers, a polyurea film deposited by the reaction of 1,4-phenylene diisocyanate (PDIC) and ethylenediamine (ED), a polyurea film with a sulfide-modified backbone, and a polythiourea films using a modified coupling chemistry. Following deposition of the MLD films, copper is sputter deposited. The copper diffusion barrier properties of the film are tested through adhesion and annealing tests, including 4-point bend testing and TEM imaging to examine the level of copper penetration. The promise and challenges of MLD-formed organic copper diffusion barriers will be discussed.

Effect of phosphorus on the copper diffusion barrier properties of electroless CoWP films

2011 ◽  
Vol 519 (15) ◽  
pp. 4958-4962 ◽  
Author(s):  
T.K. Tsai ◽  
S.S. Wu ◽  
C.S. Hsu ◽  
J.S. Fang
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Copper Diffusion

Influence of different treatment techniques on the barrier properties of MOCVD TiN against copper diffusion

2001 ◽  
Vol 55 (1-4) ◽  
pp. 213-218 ◽  
Author(s):  
S. Riedel ◽  
S.E. Schulz ◽  
J. Baumann ◽  
M. Rennau ◽  
T. Gessner
Keyword(s):  
Barrier Properties ◽  
Copper Diffusion ◽  
Treatment Techniques

High Density Plasma Silicon Carbide as a Barrier/Etch Stop Film for Copper Damascene Interconnects

2000 ◽  
Vol 612 ◽  
Author(s):  
Hichem M'Saad ◽  
Seon-Mee Cho ◽  
Manoj Vellaikal ◽  
Zhuang Li
Keyword(s):  
Dielectric Constant ◽  
Silicon Nitride ◽  
Barrier Properties ◽  
Effective Dielectric Constant ◽  
Dielectric Barrier ◽  
Copper Diffusion ◽  
Etch Stop ◽  
Damascene Interconnects ◽  
Density Plasma

AbstractA low κ dielectric barrier/etch stop has been developed for use in copper damascene application. The film is deposited using methane, silane and argon as precursors in a HDP-CVD reactor. The film has a dielectric constant of 4.2 which is lower than the dielectric constant of conventional SiC or plasma silicon nitride (>7). Film characterization including physical, electrical, adhesion to ILD films, etch selectivity, and copper diffusion barrier properties show that this film is a better barrier than silicon nitride for low κ copper damascene interconnects. This film consists of a refractive index in the range of 1.7 to 1.8, a compressive stress of 1.0-1.5×109 dynes/cm2, and a leakage current of 5.0×10−10 A/cm2 at 1 MV/cm. When integrated in-situ with HDP-FSG, an effective dielectric constant of 3.5 can be achieved.

Electrografted insulator layer as copper diffusion barrier for TSV interposers

2013 ◽  
Vol 2013 (1) ◽  
pp. 000022-000025 ◽  
Author(s):  
V. Mevellec ◽  
F. Raynal ◽  
D. Suhr ◽  
T. Dequivre ◽  
L. Religieux
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Oriented Growth ◽  
Insulator Layer ◽  
Copper Diffusion ◽  
Mechanical And Electrical Properties ◽  
Cost Of Ownership ◽  
Chemical Grafting ◽  
Precursor Molecules

Alchimer develops alternative wet solutions based on electrografting (eG™) and chemical grafting (cG™) proprietary technologies. eG is based on surface chemistry formulations and processes. It is applied to conductive and semiconductive surfaces, and enables self-oriented growth of thin coatings of various materials, especially polymer and metals, initiated by in-situ chemical reactions between specific precursor molecules and the surface. Due to outstanding thermal, mechanical and electrical properties, electrografted polymer layers are an efficient insulation layer for TSV applications. In this paper, we fill focus on the copper diffusion barrier properties of this eG polymer layer and the associated Cost of Ownership (CoO) reduction for TSV metallization.

Organization of tight junctions in the choroid plexus epithelium

1978 ◽  
Vol 36 (2) ◽  
pp. 336-337
Author(s):  
B. Van Deurs ◽  
J. K. Koehler
Keyword(s):  
Choroid Plexus ◽  
Present Report ◽  
Freeze Fracture ◽  
Barrier Properties ◽  
Cell Junctions ◽  
Structural Basis ◽  
Apical Surface ◽  
Choroid Plexus Epithelium ◽  
Solid Nitrogen ◽  
Special Composition

The choroid plexus epithelium constitutes a blood-cerebrospinal fluid (CSF) barrier, and is involved in regulation of the special composition of the CSF. The epithelium is provided with an ouabain-sensitive Na/K-pump located at the apical surface, actively pumping ions into the CSF. The choroid plexus epithelium has been described as “leaky” with a low transepithelial resistance, and a passive transepithelial flux following a paracellular route (intercellular spaces and cell junctions) also takes place. The present report describes the structural basis for these “barrier” properties of the choroid plexus epithelium as revealed by freeze fracture.Choroid plexus from the lateral, third and fourth ventricles of rats were used. The tissue was fixed in glutaraldehyde and stored in 30% glycerol. Freezing was performed either in liquid nitrogen-cooled Freon 22, or directly in a mixture of liquid and solid nitrogen prepared in a special vacuum chamber. The latter method was always used, and considered necessary, when preparations of complementary (double) replicas were made.

Growth of near noble metal Pd and Pt thin film silicides morphology and structure

1984 ◽  
Vol 42 ◽  
pp. 498-499
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh
Keyword(s):  
Noble Metals ◽  
Annealing Temperature ◽  
Chemical Compounds ◽  
Barrier Properties ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Stable Chemical ◽  
Metal Thickness ◽  
Amorphous Si ◽  
Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

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