Thickness Measurements of Epitaxial Layers of Double Epitaxial Silicon Wafers by Far‐Infrared Reflection

1998 ◽  
Vol 145 (5) ◽  
pp. 1720-1723
Author(s):  
Hiroshi Shirai ◽  
Kenji Akai ◽  
Toshio Abe
Keyword(s):  
Far Infrared ◽  
Silicon Wafers ◽  
Epitaxial Layers ◽  
Epitaxial Silicon ◽  
Infrared Reflection ◽  
Thickness Measurements

Far-infrared free-hole absorption in epitaxial silicon films for homojunction detectors

1997 ◽  
Vol 71 (4) ◽  
pp. 515-517 ◽  
Author(s):  
A. G. U. Perera ◽  
W. Z. Shen ◽  
W. C. Mallard ◽  
M. O. Tanner ◽  
K. L. Wang
Keyword(s):  
Far Infrared ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
Free Hole

Gettering of iron impurities in p/p+ epitaxial silicon wafers with heavily boron‐doped substrates

1995 ◽  
Vol 66 (20) ◽  
pp. 2709-2711 ◽  
Author(s):  
Masaki Aoki ◽  
Toru Itakura ◽  
Nobuo Sasaki
Keyword(s):  
Silicon Wafers ◽  
Epitaxial Silicon ◽  
Boron Doped

Infrared reflection in the Reststrahlen region of GaN MBE grown epitaxial layers on Si substrates

1999 ◽  
Vol 8 (1) ◽  
pp. 25-28 ◽  
Author(s):  
A. Iller ◽  
W. Jantsch ◽  
J. Marks ◽  
B. Pastuszka ◽  
R. Diduszko ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Si Substrates ◽  
Infrared Reflection
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