Effects of Experimental Parameters on Void Formation in the Growth of 3C‐SiC Thin Film on Si Substrate

1998 ◽  
Vol 145 (1) ◽  
pp. 292-299 ◽  
Author(s):  
Young Hun Seo ◽  
Kwang Chul Kim ◽  
Hyun Wuk Shim ◽  
Kee Suk Nahm ◽  
Eun‐Kyung Suh ◽  
...  
Keyword(s):  
Thin Film ◽  
Void Formation ◽  
Si Substrate ◽  
Experimental Parameters

The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film on Si Substrate

1998 ◽  
Vol 264-268 ◽  
pp. 199-202 ◽  
Author(s):  
Y.H. Seo ◽  
K.C. Kim ◽  
H.W. Shim ◽  
Kee Suk Nahm ◽  
Eun Kyung Suh ◽  
...  
Keyword(s):  
Thin Film ◽  
Void Formation ◽  
Si Substrate

scholarly journals Modeling the Sputter Deposition of Thin Film Photovoltaics using Long Time Scale Dynamics Techniques

2011 ◽  
Vol 1327 ◽  
Author(s):  
S. Blackwell ◽  
R. Smith ◽  
S. D. Kenny ◽  
J. M. Walls
Keyword(s):  
Thin Film ◽  
Time Scale ◽  
Plasma Deposition ◽  
Kinetic Monte Carlo ◽  
Void Formation ◽  
Substrate Bias ◽  
Time Dynamics ◽  
Experimental Parameters ◽  
Long Time ◽  
Crystalline Growth

ABSTRACTResults are presented for modeling the deposition of Ag and rutile TiO2. The model can be used to examine the effect of varying experimental parameters, such as the substrate bias in the magnetron and the stoichiometry of the deposition species. We illustrate how long time scale dynamics techniques can be used to model the process over experimental time scales. Long time dynamics is achieved through an on-the-fly Kinetic Monte Carlo (otf-KMC) method, which determines diffusion pathways and barriers, in parallel, with no prior knowledge of the involved transitions. Using this otf-KMC method we have modeled the deposition of Ag and TiO2 for various plasma deposition energies, in the range 1 eV to 100 eV. It was found that Ag {111} produces the most crystalline growth when deposited at 40 eV. TiO2 growth showed that at energies of 1 eV and 100 eV a porous structure occurs with void formation. At deposition energies of 30 eV and 40 eV, a more dense and crystalline rutile growth forms. The results show that deposition energy plays an important role in the resulting thin film quality and surface morphology.

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

A New Specimen for Measuring the Interfacial Toughness of Al-0.5%Cu Thin Film on Si Substrate

2005 ◽  
Vol 297-300 ◽  
pp. 521-526
Author(s):  
Insu Jeon ◽  
Masaki Omiya ◽  
Hirotsugu Inoue ◽  
Kikuo Kishimoto ◽  
Tadashi Asahina
Keyword(s):  
Thin Film ◽  
The Finite Element Method ◽  
Si Substrate ◽  
Detailed Structure ◽  
Micro Fabrication ◽  
Interfacial Toughness ◽  
Linear Elastic ◽  
Elastic Fracture ◽  
Cu Thin Film ◽  
Research Show

A new specimen is proposed to measure the interfacial toughness between the Al-0.5%Cu thin film and the Si substrate. The plain and general micro-fabrication processes are sufficient to fabricate the specimen. With the help of the finite element method and the concepts of the linear elastic fracture mechanics, the detailed structure for this specimen is modeled and evaluated. The results obtained from this research show that the proposed specimen provides efficient and convenient method to measure the interfacial toughness between the Al-Cu thin film and the Si substrate.

PREPARATION AND FERROELECTRIC PROPERTY OF (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 THIN FILM ON Pt/Ti/SiO2/Si SUBSTRATE

2010 ◽  
Vol 17 (05n06) ◽  
pp. 445-449 ◽  
Author(s):  
SUHUA FAN ◽  
QUANDE CHE ◽  
FENGQING ZHANG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Property ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Si Substrate ◽  
Degree Of Orientation ◽  
Equiaxed Grains

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi ) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.

Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate

2006 ◽  
Vol 320 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Near Infrared Light ◽  
Transmission Electron ◽  
Doped Zno ◽  
Er Doped

We have obtained Er-doped ZnO thin film in a micropattern of reverse trapezoids processed on Si substrate by sputtering and ultrafine polishing techniques. Near-infrared light emission was detected successfully from the thin film filling a single micropit with 10 μm square. Transmission electron microscopy (TEM) observation showed epitaxial growth of ZnO crystals along the curvature of the micropit.

Bonding of LINBO3 thin film on Si substrate using laser irradiation

2015 ◽  
Author(s):  
Hiroki Kawano ◽  
Ryo Takigawa ◽  
Hiroshi Ikenoue ◽  
Tanemasa Asano
Keyword(s):  
Thin Film ◽  
Laser Irradiation ◽  
Si Substrate

Effects of interface between SnO2 thin film and Si substrate on growth time

2012 ◽  
Vol 12 (1) ◽  
pp. 303-306 ◽  
Author(s):  
Jin Jeong ◽  
Do-Sun Na ◽  
Bong-Ju Lee ◽  
Ho-Jun Song ◽  
Hyun-Goo Kim
Keyword(s):  
Thin Film ◽  
Sno2 Thin Film ◽  
Growth Time ◽  
Si Substrate

Ferroelectric and piezoelectric properties of highly oriented Pb(Zr,Ti)O3 film grown on Pt/Ti/SiO2/Si substrate using conductive lanthanum nickel nitrate buffer layer

2005 ◽  
Vol 20 (3) ◽  
pp. 726-733 ◽  
Author(s):  
Jong-Jin Choi ◽  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Hyoun-Ee Kim
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Nickel Nitrate ◽  
Si Substrate ◽  
Pzt Thin Film ◽  
Pzt Films ◽  
Lanthanum Nickel ◽  
Ferroelectric And Piezoelectric Properties

The orientation and electrical properties of Pb(Zr,Ti)O3 thin films deposited on a Pt/Ti/SiO2/Si substrate using lanthanum nickel nitrate as a conductive buffer layer were analyzed. The lanthanum nickel nitrate buffer layer was not only electrically conductive but also effective in controlling the texture of the lead zirconate titanate (PZT) thin film. The role of the lanthanum nickel nitrate buffer layer and its effects on the orientation of the PZT thin film were analyzed by x-ray diffraction, electron beam back-scattered diffraction, and scanning electron microscopy. The annealed lanthanum nickel nitrate buffer layer was sufficiently conducting for use in longitudinal electrode configuration devices. The dielectric, ferroelectric, and piezoelectric properties of the highly (100) oriented PZT films grown with the lanthanum nickel nitrate buffer layer were measured and compared with those of (111) and (100) oriented PZT films deposited without a buffer layer.

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