Analysis of stoichiometry and oxide growth of HF treated GaAs (100) by x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry
1994 ◽
Vol 12
(1)
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pp. 147
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2011 ◽
Vol 29
(4)
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pp. 04D113
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1994 ◽
Vol 12
(3)
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pp. 671-676
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2008 ◽
Vol 8
(1)
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pp. 358-365
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1998 ◽
Vol 16
(6)
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pp. 3048
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1999 ◽
Vol 27
(3)
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pp. 142-152
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2002 ◽
Vol 13
(4)
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pp. 407-428
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1999 ◽
Vol 17
(4)
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pp. 1244-1249
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