Dependence on Morphology of Oxygen Precipitates upon Oxygen Supersaturation in Czochralski Silicon Crystals

1997 ◽  
Vol 144 (9) ◽  
pp. 3180-3184 ◽  
Author(s):  
Hiroyuki Fujimori
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitates

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Crystallographic Analysis Of Flow Pattern Defects In Dislocated Czochralski Silicon Crystals

1996 ◽  
Vol 442 ◽  
Author(s):  
Y. Ikematsu ◽  
T. Iwasaki ◽  
H. Harada ◽  
K. Tanaka ◽  
M. Fujinami ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Crystallographic Analysis ◽  
Crystal Defects ◽  
Dislocation Loops ◽  
Etch Pits ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Transmission Electron ◽  
Type Dislocation ◽  
Oxygen Precipitates

AbstractIn dislocated Cz-Si crystals, rows of flow patterns (FP) and Secco etch pits (SEP) (2–3 mm in length, along <110> direction) can be revealed by Secco etch without agitation. In this study, the crystal defects forming FP-SEP rows in dislocated Cz-Si crystals are investigated by transmission electron microscopy. Microdefects, 0.1 μm in size, are observed in a row along a FP-SEP row, <110> direction. These defects were identified as oxygen precipitates with or without dislocation loops (interstitial-type), and voids with oxidized interiors. We conclude that FP originate from interstitial-type dislocation loops, and SEP are due to oxygen precipitates or voids.

Correlation of Oxygen and Recombination Centers on a Microscale in Asgrown Czochralski Silicon Crystals

1982 ◽  
Vol 14 ◽  
Author(s):  
K. Nauka ◽  
H. C. Gatos ◽  
J. Lagowski
Keyword(s):  
Oxygen Concentration ◽  
Carrier Lifetime ◽  
Growth Direction ◽  
Interstitial Oxygen ◽  
Czochralski Silicon ◽  
Laser Absorption ◽  
Silicon Crystals ◽  
Recombination Centers ◽  
Oxygen Precipitates ◽  
Absorption Technique

ABSTRACTQuantitative microprofiles of the interstitial oxygen concentration and of the excess carrier lifetime, with a spacial resolution of about 20 μm, were obtained in as-grown dislocationfree CZ-Si crystals employing a double laser absorption technique. It was found that maxima (minima) in oxygen concentration along the crystal growth direction coincide with minima (maxima) of the lifetime. It was further found that the relation between changes in oxygen concentration and in lifetime varies in the radial direction indicating that “as-grown” oxygen precipitates are involved in lifetime limiting processes.

Oxygen‐induced recombination centers in as‐grown Czochralski silicon crystals

1983 ◽  
Vol 43 (3) ◽  
pp. 241-243 ◽  
Author(s):  
K. Nauka ◽  
H. C. Gatos ◽  
J. Lagowski
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Recombination Centers

Enhancement of oxygen precipitation in quenched Czochralski silicon crystals

1989 ◽  
Vol 66 (8) ◽  
pp. 3958-3960 ◽  
Author(s):  
Akito Hara ◽  
Tetsuo Fukuda ◽  
Toru Miyabo ◽  
Iesada Hirai
Keyword(s):  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation

Investigation of stoichiometry of oxygen precipitates in Czochralski silicon wafers by means of EDX, EELS and FTIR spectroscopy

2016 ◽  
Vol 99 ◽  
pp. 231-235 ◽  
Author(s):  
D. Kot ◽  
G. Kissinger ◽  
M.A. Schubert ◽  
M. Klingsporn ◽  
A. Huber ◽  
...  
Keyword(s):  
Ftir Spectroscopy ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitates
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