Kinetic study of 3C-SiC growth on Si by pyrolyzing tetramethysilane in low pressure radio frequency-induction heated chemical vapor deposition reactor

2000 ◽  
Vol 18 (3) ◽  
pp. 891-899 ◽  
Author(s):  
Kwang Chul Kim ◽  
Kee Suk Nahm ◽  
Yoon Bong Hahn ◽  
Yeon Sik Lee ◽  
Hun-Soo Byun
Keyword(s):  
Chemical Vapor Deposition ◽  
Radio Frequency ◽  
Kinetic Study ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chemical Vapor Deposition Reactor

Combinatorial Chemical Vapor Deposition of Metal Silicate Films Using Tri(t -butoxy) silanol and Anhydrous Metal Nitrates

2003 ◽  
Vol 804 ◽  
Author(s):  
Lijuan Zhong ◽  
Fang Chen ◽  
Stephen A. Campbell ◽  
Wayne L. Gladfelter
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Rutherford Backscattering ◽  
Chemical Vapor Deposition Reactor ◽  
Metal Nitrates ◽  
Metal Silicate ◽  
Pressure Chemical

ABSTRACTA modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250 °C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.

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