Defect Generation during Epitaxial CoSi2 Formation Using Co/Ti Bilayer on Oxide Patterned (100)Si Substrate and Its Effect on the Electrical Properties

1996 ◽  
Vol 143 (3) ◽  
pp. L56-L58 ◽  
Author(s):  
Jeong Soo Byun ◽  
Jeong Min Seon ◽  
Kang Shik Youn ◽  
Hyunsang Hwang ◽  
Jin Won Park ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Si Substrate ◽  
Defect Generation

Defect Generation During Epitaxial Growth of CoSi2 on Miniature Sized (100) Si Substrate and its Effect on Electrical Properties

1995 ◽  
Vol 402 ◽  
Author(s):  
Jeong Soo Byun ◽  
Jeong Min Seon ◽  
Jin Won Park ◽  
Hyunsang Hwang ◽  
Jae Jeong Kim-
Keyword(s):  
Electrical Properties ◽  
Epitaxial Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Gate Oxide ◽  
Si Substrate ◽  
Device Failure ◽  
Shallow Junction ◽  
Defect Generation ◽  
Substrate Defects

AbstractSelf-aligned silicide (salicide) formation of epitaxial CoSi2, using a Co/Ti bilayer, on linear oxide (SiO2) patterned (100)Si substrate has been investigated. Rapid thermal annealing (RTA) at 550°C resulted in the lateral encroachment of silicide in the Si under the edge of the oxide. After RTA at 900°C, even though an epitaxial CoSi2 layer was formed on the Si substrate, defects such as lateral encroachment and voids were generated under the edge of the oxide. It was found that such defects lead to device failure due to the deterioration of the gate oxide and the shallow junction.

The Microstructure and Electrical Property of Porous Cu Film on Soft PVDF Substrate

2012 ◽  
Vol 472-475 ◽  
pp. 1451-1454
Author(s):  
Xue Hui Wang ◽  
Wu Tang ◽  
Ji Jun Yang
Keyword(s):  
Electrical Properties ◽  
Film Surface ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Cu Films ◽  
Cu Film ◽  
Diffraction Peaks ◽  
Sputtering Pressure ◽  
Effect Method

The porous Cu film was deposited on soft PVDF substrate by magnetron sputtering at different sputtering pressure. The microstructure and electrical properties of Cu films were investigated as a function of sputtering pressure by X-ray diffraction XRD and Hall effect method. The results show that the surface morphology of Cu film is porous, and the XRD revealed that there are Cu diffraction peaks with highly textured having a Cu-(220) or a mixture of Cu-(111) and Cu-(220) at sputtering pressure 0.5 Pa. The electrical properties are also severely influenced by sputtering pressure, the resistivity of the porous Cu film is much larger than that fabricated on Si substrate. Furthermore, the resistivity increases simultaneously with the increasing of Cu film surface aperture, but the resistivity of Cu film still decreases with the increasing grain size. It can be concluded that the crystal structure is still the most important factor for the porous Cu film resistivity.

Thermal Annealing of Amorphous CoMnNiO Film on Oxidized Si Substrate

1989 ◽  
Vol 164 ◽  
Author(s):  
Tan Hui ◽  
Qin Dong ◽  
Tao Mingde ◽  
Lin Chenglu ◽  
Zou Shichang
Keyword(s):  
Solid Solution ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Amorphous Film ◽  
Spinel Solid Solution ◽  
Si Substrate ◽  
Structure Relaxation ◽  
Spinel Solid Solutions

AbstractAmorphous CoMnNiO film is doposited on oxidized Si substrate by RF sputtering equipment. Structure relaxation occurs in the amorphous CoMnNiO film when it is annealed below 550°C. Annealed in the range from 600°C to 1000°C, the amorphous film is converted into the polycrystal. After annealing in rich oxygen atmosphere, the amorphous film is transformed into spinel solid solution with stable structure and good electrical properties. The electrical conductivity will be reduced due to formation of low valence oxides when annealed without oxygen. As annealing temperature is higher than 1000°C, some spinel solid solutions will be resolved into low valence oxides CoO and NiO, reducing the conductivity of the CoMnNiO film.

Optical and electrical properties of (1-101)GaN grown on a 7° off-axis (001)Si substrate

2004 ◽  
Vol 84 (23) ◽  
pp. 4717-4719 ◽  
Author(s):  
T. Hikosaka ◽  
T. Narita ◽  
Y. Honda ◽  
M. Yamaguchi ◽  
N. Sawaki
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Si Substrate

Magnetic and Electrical Properties of (La, Sr)MnO3 Sputtered on SrTiO3-buffered Si Substrate

2004 ◽  
Author(s):  
Tetsuya Uemura ◽  
Yasuhiro Takagi ◽  
Kenji Sekine ◽  
Ken-ichi Matsuda ◽  
Masafumi Yamamoto
Keyword(s):  
Electrical Properties ◽  
Si Substrate ◽  
Magnetic And Electrical Properties

Electrical Characteristics of ZnTe Thermoelectric Thin Films

2014 ◽  
Vol 535 ◽  
pp. 688-691 ◽  
Author(s):  
Wen Shiush Chen ◽  
Cheng Hsing Hsu ◽  
Wen Hua Kao ◽  
Yi Ting Yu ◽  
Pai Chuan Yang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Thermoelectric Device ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Device Applications ◽  
Thermoelectric Thin Films ◽  
Thermal Coating

Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×1015cm-3, 0.25 Ω-cm, and 49 cm2V-1S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.

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