Thermal Annealing of Amorphous CoMnNiO Film on Oxidized Si Substrate

1989 ◽  
Vol 164 ◽  
Author(s):  
Tan Hui ◽  
Qin Dong ◽  
Tao Mingde ◽  
Lin Chenglu ◽  
Zou Shichang
Keyword(s):  
Solid Solution ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Amorphous Film ◽  
Spinel Solid Solution ◽  
Si Substrate ◽  
Structure Relaxation ◽  
Spinel Solid Solutions

AbstractAmorphous CoMnNiO film is doposited on oxidized Si substrate by RF sputtering equipment. Structure relaxation occurs in the amorphous CoMnNiO film when it is annealed below 550°C. Annealed in the range from 600°C to 1000°C, the amorphous film is converted into the polycrystal. After annealing in rich oxygen atmosphere, the amorphous film is transformed into spinel solid solution with stable structure and good electrical properties. The electrical conductivity will be reduced due to formation of low valence oxides when annealed without oxygen. As annealing temperature is higher than 1000°C, some spinel solid solutions will be resolved into low valence oxides CoO and NiO, reducing the conductivity of the CoMnNiO film.

Electrical Characteristics of ZnTe Thermoelectric Thin Films

2014 ◽  
Vol 535 ◽  
pp. 688-691 ◽  
Author(s):  
Wen Shiush Chen ◽  
Cheng Hsing Hsu ◽  
Wen Hua Kao ◽  
Yi Ting Yu ◽  
Pai Chuan Yang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Thermoelectric Device ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Device Applications ◽  
Thermoelectric Thin Films ◽  
Thermal Coating

Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×1015cm-3, 0.25 Ω-cm, and 49 cm2V-1S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.

scholarly journals Control of Electrical and Optical Parameters of Humidity Sensors Active Elements Based on Tin Oxides Films with Variable Composition

2019 ◽  
Vol 10 (2) ◽  
pp. 138-150 ◽  
Author(s):  
D. V. Adamchuck ◽  
V. K. Ksenevich
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gas Sensors ◽  
Annealing Temperature ◽  
Argon Plasma ◽  
Electromagnetic Spectrum ◽  
Optical And Electrical Properties ◽  
High Electrical Conductivity ◽  
Synthesis Parameters ◽  
Tin Oxides

The aim of this work is development of technique for synthesis of tin oxides films with various stoichiometric composition, characterized by high electrical conductivity and light transmittance in the UV and visible range of the electromagnetic spectrum, for their further application as humidity and gas sensors, as well as electrodes for electro-and photocatalytic converters.Nonstoichiometric SnO/SnO2 /SnO2−δ films were synthesized by reactive magnetron sputtering of tin onto glass substrates in argon plasma with oxygen addition and with subsequent thermal oxidation of the formed layers in air. To change the structural, optical, and electrical properties of the films and to find out the optimal synthesis parameters, the oxygen content during the deposition process and the annealing temperature in air were varied in the range of 0–2 vol. % and of 200–450 °C, respectively. The characterization of the films was carried out using a 4-probe method for measuring the electrical resistance, X-ray diffraction, and optical spectroscopy of light transmission.As a result of a comprehensive analysis of the structural, optical and electrical properties of the films, it was found that the optimal synthesis parameters to obtain the most transparent and conductive coatings promising for use as humidity, gas sensors and in photovoltaic devices are the following: oxygen content in argon plasma during sputtering process is ≈ 0,8–1,2 vol. %, the annealing temperature in air is ≈ 350–375 °C. In this case a polycrystalline film with high electrical conductivity and high transmittance in the visible and UV regions of the electromagnetic spectrum with prevailing of tin dioxide phase with structural defects (oxygen vacancies) is formed.

Structural, optical and electrical properties of transparent conducting CuInO2 thin films prepared by RF sputtering

2005 ◽  
Vol 865 ◽  
Author(s):  
Bin Yang ◽  
Yunbin He ◽  
Angalika Polity ◽  
Bruno K. Meyer
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Band Gap ◽  
Rf Sputtering ◽  
Wavelength Dependence ◽  
Band Gap Energy ◽  
Optical And Electrical Properties ◽  
Transparent Conducting ◽  
Delafossite Structure

AbstractThe transparent conducting CuInO2 thin films were prepared by radio frequency (RF) reactive sputtering and post growth annealing. A study of structural, optical, and electrical properties was performed on the films. The crystalline phase in the films was identified to be the delafossite structure. The optical properties, such as the wavelength dependence of the transmittance and the band gap energy, were determined. The average transmittance is 70% in the wavelength range of 400-1100 nm and the band gap is ˜3.7 eV. The temperaturedependence of electrical conductivity in the CuInO2 delafossite thin films was measured from 70 to 400K. The resistivity, carrier density, and mobility of the thin films at 300K were 1.8x101 Δcm, 1.6x1019 cm-3 and 2x10-1 cm2/Vs, respectively. Hall coefficient indicated that the CuInO2 thin films are n-type conductors. The electrical conductivity showed semiconducting type at room temperature.

scholarly journals Simultaneous Increase of Electrical Conductivity and Hardness of Al–1.5 wt.% Mn Alloy by Addition of 1.5 wt.% Cu and 0.5 wt.% Zr

Metals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1246 ◽  
Author(s):  
Nikolay Belov ◽  
Natalya Korotkova ◽  
Torgom Akopyan ◽  
Kirill Tsydenov
Keyword(s):  
Solid Solution ◽  
Electrical Conductivity ◽  
Annealing Temperature ◽  
Simultaneous Increase ◽  
Aluminum Solid Solution ◽  
Cold Rolled ◽  
Metal Processing

The effect of Cu and Zr additions and annealing temperature on electrical conductivity and hardness of the Al–1.5 wt.% Mn alloy in the form of as-cast ingots and cold rolled sheets has been investigated. It is shown that due to the formation of low alloyed aluminum solid solution and Al20Cu2Mn3 and Al3Zr (L12) phase nanoparticles, the 1.5MnCuZr alloy is superior to the base 1.5Mn alloy both in the hardness (up to two times) and electrical conductivity (up to 30%) after metal processing and annealing. A new alloy can be considered as a replacement for existing 6201 type conductive alloys.

A Study of the Structural and Electrical Characteristics of Thermally Oxidized Al-Doped Zn3N2 Film on Glass

2012 ◽  
Vol 545 ◽  
pp. 294-299
Author(s):  
L.Y. Low ◽  
Mat Johar Abdullah ◽  
N.H. Al-Hardan
Keyword(s):  
Zinc Oxide ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Xrd Analysis ◽  
Nitride Film ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Zinc Nitride ◽  
Structural And Electrical Properties

We report the deposition of aluminium doped zinc nitride film (Al-Zn3N2) on glass substrates by RF sputtering. Thermal oxidation of the film under different annealing temperature (500°C to 600°C) was carried out. Structural and electrical properties of the annealed films were investigated. XRD analysis showed that Al-Zn3N2film was successfully converted into Al-N zinc oxide (ANZO) at 500°C. I-V characteristics of the films were measured and the lowest estimated resistivity of the films of 4kΩ.cm can be achieved at 600°C.

Electrical Conductivity of the Manganese Chromite Spinel Solid Solution

2005 ◽  
Vol 88 (4) ◽  
pp. 1050-1053 ◽  
Author(s):  
Zigui Lu ◽  
Jiahong Zhu ◽  
E. Andrew Payzant ◽  
Mariappan P. Paranthaman
Keyword(s):  
Solid Solution ◽  
Electrical Conductivity ◽  
Spinel Solid Solution

Structural and Electrical Properties of Vanadium Tungsten Oxide Thin Films Grown on Pt/TiO2/SiO2/Si Substrates

2008 ◽  
Vol 569 ◽  
pp. 73-76
Author(s):  
Sung Pill Nam ◽  
Sung Gap Lee ◽  
Young Hie Lee
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Dielectric Loss ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Dielectric Constants ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Tungsten Oxide Thin Films

The V1.9W0.1O5 thin films deposited on Pt/Ti/SiO2/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the V1.9W0.1O5 thin films annealed at 300°C were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the V1.9W0.1O5 thin films annealed at 300°C were about -3.7%/K.

Precipitation Behaviour of Chromium in CaO-MgO-SiO2-Al2O3-Cr2O3-Fe2O3 Slag System

2014 ◽  
Vol 1073-1076 ◽  
pp. 21-27
Author(s):  
Xing Rong Wu ◽  
Bao Ma ◽  
Hui Hong Lü ◽  
Liao Sha Li ◽  
Xing Mei Shen
Keyword(s):  
Solid Solution ◽  
Annealing Temperature ◽  
Slag System ◽  
Amorphous Structure ◽  
Spinel Solid Solution ◽  
Cooling Process ◽  
Melt Quenching ◽  
Precipitation Behaviour ◽  
Quenching Process ◽  
Process Annealing

Different cooling process, annealing temperature and addition of B2O3were experimented on the CaO-MgO-SiO2-Al2O3-Cr2O3-Fe2O3slag system with an aim to investigate the chromium precipitation behaviour. The solidified slags were characterized by XRD, SEM, EDX and EPMA. It was shown that, under melt-quenching process, chromium was immobilized in amorphous structure in the slag with basicity lower than 1.0 and Cr2O3content less than 4.0 wt%. It was also found that addition of B2O3and higher annealing temperature would be helpful for the precipitation of chromium into spinel solid solution in slag with basicity of 1.5.

scholarly journals Effect the Thickness on the Electrical Properties and (I-V) Character of the (CdTe) Thin Films and Find the Efficiency of Solar Cell CdTe/CdS

2018 ◽  
Vol 15 (2) ◽  
pp. 192-197
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Solar Cell ◽  
Electrical Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Annealing Temperatures ◽  
Evaporation Technique ◽  
Cdte Thin Films ◽  
Vacuum Evaporation Technique

Thin films of CdTe were prepared with thickness (500, 1000) nm on the glass substrate by vacuum evaporation technique at room temperature then treated different annealing temperatures (373,473,and 573)K for one hour. Results of the Hall Effect and the electrical conductivity of (I-V) characteristics were measured in darkness and light.at different annealing temperature results show that the thin films have ability to manufacture solar cells, and found that the efficient equal to (2.18%) for structure solar cell (Algrid / CdS / CdTe /glass/ Al) and the efficient equal to (1.12%) for structure solar cell (Algrid / CdS / CdTe /Si/ Al) with thick ness of (1000) nm with CdTe thin films at RT.

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