Time-Dependent Dielectric Breakdown Studies of PECVD H:SiCN and H:SiC Thin Films for Copper Metallization

2004 ◽  
Vol 151 (11) ◽  
pp. G795 ◽  
Author(s):  
Hao Cui ◽  
Peter A. Burke
Keyword(s):  
Thin Films ◽  
Dielectric Breakdown ◽  
Time Dependent ◽  
Copper Metallization ◽  
Time Dependent Dielectric Breakdown

Time-Dependent Dielectric Breakdown of Interlevel Dielectrics for Copper Metallization

1996 ◽  
Vol 35 (Part 1, No. 3) ◽  
pp. 1685-1689 ◽  
Author(s):  
Hiroshi Miyazaki ◽  
Kenji Hinode ◽  
Yoshio Homma ◽  
Nobuyoshi Kobayashi
Keyword(s):  
Dielectric Breakdown ◽  
Time Dependent ◽  
Copper Metallization ◽  
Time Dependent Dielectric Breakdown

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

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