Time-dependent dielectric breakdown of hydrogenated silicon carbon nitride thin films under the influence of copper ions

2004 ◽  
Vol 84 (14) ◽  
pp. 2629-2631 ◽  
Author(s):  
Hao Cui ◽  
Peter A. Burke
Keyword(s):  
Thin Films ◽  
Carbon Nitride ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Time Dependent ◽  
Hydrogenated Silicon ◽  
Time Dependent Dielectric Breakdown ◽  
Silicon Carbon ◽  
Silicon Carbon Nitride

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

Hydrogenated silicon carbon nitride films obtained by HWCVD, PA-HWCVD and PECVD techniques

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1361-1366 ◽  
Author(s):  
I. Ferreira ◽  
E. Fortunato ◽  
P. Vilarinho ◽  
A.S. Viana ◽  
A.R. Ramos ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Hydrogenated Silicon ◽  
Silicon Carbon ◽  
Silicon Carbon Nitride

scholarly journals Silicon Carbon Nitride Thin Films Deposited by Pulsed Microwave Plasma Assisted Chemical Vapour Deposition

2017 ◽  
Vol 17 (6) ◽  
pp. 306-314
Author(s):  
Paul Kouakou ◽  
Pamela Yoboue ◽  
Bafetigue Ouattara ◽  
Mohammed Belmahi ◽  
Jamal Bougdira
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Carbon Nitride ◽  
Vapour Deposition ◽  
Microwave Plasma ◽  
Chemical Vapour ◽  
Silicon Carbon ◽  
Silicon Carbon Nitride
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