Interactions Between Brightener and Chloride Ions on Copper Electroplating for Laser-Drilled Via-Hole Filling

2003 ◽  
Vol 6 (9) ◽  
pp. C134 ◽  
Author(s):  
Wei-Ping Dow ◽  
Her-Shu Huang ◽  
Zack Lin
Keyword(s):  
Chloride Ions ◽  
Hole Filling ◽  
Copper Electroplating ◽  
Via Hole

Via/Hole Filling by Pulse-Reverse Copper Electroplating for 3D SiP

2006 ◽  
Vol 510-511 ◽  
pp. 942-945 ◽  
Author(s):  
Gun Ho Chang ◽  
Si Young Chang ◽  
Jae Ho Lee
Keyword(s):  
Cross Section ◽  
Reverse Current ◽  
Hole Filling ◽  
Horizontal Cross Section ◽  
Free Hole ◽  
Copper Diffusion ◽  
Copper Electroplating ◽  
Pulse Reverse ◽  
Via Hole ◽  
3D Stacking

Copper via filling is an important factor in 3D stacking interconnection of SiP (system in package). As the packaging density is getting higher, the size of via is getting smaller. When DC electroplating is applied, a defect-free hole cannot be obtained in a small size hole. To prevent the defects in holes, pulse and pulse reverse current was applied in copper via filling. The size of 50, 70, 100 in diameter and 100 in height. The holes were prepared by DRIE method. TaN and Ta was sputtered for copper diffusion barrier. Via specimen were filled by DC, pulse and pulse-reverse current electroplating methods. The effects of additives and current types on copper deposits were investigated. Vertical and horizontal cross section of the via were observed by SEM to find the defects in via. When pulse-reverse electroplating method was used, defect free via were uccessfully obtained.

Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing

1989 ◽  
Vol 28 (Part 2, No. 11) ◽  
pp. 2054-2056 ◽  
Author(s):  
Min-Lin Cheng ◽  
Armin Kohlhase ◽  
Taketoshi Sato ◽  
Shin-ichi Kobayashi ◽  
Junichi Murota ◽  
...  
Keyword(s):  
Impurity Diffusion ◽  
Hole Filling ◽  
Filling Method ◽  
Via Hole

scholarly journals Cu Through-Via Formation using Open Via-hole Filling with Electrodeposition

2014 ◽  
Vol 21 (4) ◽  
pp. 117-123
Author(s):  
Jae-Hwan Kim ◽  
Dae-Woong Park ◽  
Min-Young Kim ◽  
Tae Sung Oh
Keyword(s):  
Hole Filling ◽  
Via Hole

Selective Electroless Metal Deposition for Via Hole Filling in VLSI Multilevel Interconnection Structures

1989 ◽  
Vol 136 (2) ◽  
pp. 462-466 ◽  
Author(s):  
C. H. Ting ◽  
M. Paunovic ◽  
P. L. Pai ◽  
G. Chiu
Keyword(s):  
Metal Deposition ◽  
Hole Filling ◽  
Via Hole

Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing

1989 ◽  
Author(s):  
Min-Lin CHENG ◽  
Armin KOHLHASE ◽  
Taketoshi SATO ◽  
Shin-ichi KOBAYASHI ◽  
Junichi MUROTA ◽  
...  
Keyword(s):  
Impurity Diffusion ◽  
Hole Filling ◽  
Filling Method ◽  
Via Hole

High-speed via hole filling using electrophoresis of Ag nanoparticles

2015 ◽  
Author(s):  
Ryo Takigawa ◽  
Kohei Nitta ◽  
Akihiro Ikeda ◽  
Mitsuaki Kumazawa ◽  
Toshiharu Hirai ◽  
...  
Keyword(s):  
Ag Nanoparticles ◽  
High Speed ◽  
Hole Filling ◽  
Via Hole
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