Characteristics of Abrasive-Free Micelle Slurry for Copper CMP

2003 ◽  
Vol 150 (9) ◽  
pp. G532 ◽  
Author(s):  
Takayuki Matsuda ◽  
Hideaki Takahashi ◽  
Muneaki Tsurugaya ◽  
Kuon Miyazaki ◽  
Toshiroh K. Doy ◽  
...  
Keyword(s):  
Author(s):  
Z. G. Song ◽  
S. P. Neo ◽  
S. K. Loh ◽  
C. K. Oh

Abstract New process will introduce new failure mechanisms during microelectronic device manufacturing. Even if the same defect, its root causes can be different for different processes. For aluminum(Al)-tungsten(W) metallization, the root cause of metal bridging is quite simple and mostly it is blocked etch or under-etch. But, for copper damascene process, the root causes of metal bridging are complicated. This paper has discussed the various root causes of metal bridging for copper damascene process, such as those related to litho-etch issue, copper CMP issue, copper corrosion issue and so on.


2009 ◽  
Vol 1157 ◽  
Author(s):  
Shantanu Tripathi ◽  
Fiona M. Doyle ◽  
David A. Dornfeld

AbstractDuring copper CMP, abrasives and asperities interact with the copper at the nano-scale, partially removing protective films. The local Cu oxidation rate increases, then decays with time as the protective film reforms. In order to estimate the copper removal rate and other Cu-CMP output parameters with a mechanistic model, the passivation kinetics of Cu, i.e. the decay of the oxidation current with time after an abrasive/copper interaction, are needed. For the first time in studying Cu-CMP, microelectrodes were used to reduce interference from capacitive charging, IR drops and low diffusion limited currents, problems typical with traditional macroelectrodes. Electrochemical impedance spectroscopy (EIS) was used to obtain the equivalent circuit elements associated with different electrochemical phenomena (capacitive, kinetics, diffusion etc.) at different polarization potentials. These circuit elements were used to interpret potential-step chronoamperometry results in inhibiting and passivating solutions, notably to distinguish between capacitive charging and Faradaic currents.Chronoamperometry of Cu in acidic aqueous glycine solution containing the corrosion inhibitor benzotriazole (BTA) displayed a very consistent current decay behavior at all potentials, indicating that the rate of current decay was controlled by diffusion of BTA to the surface. In basic aqueous glycine solution, Cu (which undergoes passivation by a mechanism similar to that operating in weakly acidic hydrogen peroxide slurries) displayed similar chronoamperometric behavior for the first second or so at all anodic potentials. Thereafter, the current densities at active potentials settled to values around those expected from polarization curves, whereas the current densities at passive potentials continued to decline. Oxidized Cu species typically formed at ‘active’ potentials were found to cause significant current decay at active potentials and at passive potentials before more protective passive films form. This was established from galvanostatic experiments.


2002 ◽  
Vol 732 ◽  
Author(s):  
Jin Amanokura ◽  
Yasuo Kamigata ◽  
Masanobu Habiro ◽  
Hiroshi Suzuki ◽  
Masanobu Hanazono

AbstractAbrasive-free Cu CMP solutions have been developed to reduce micro-scratches and obtain minimized dishing and erosion properties. During the development of the solutions, some electrochemical examinations were performed. One of the most instructive knowledge was obtained through the Tafel plot. Other attractive data were obtained through Cu complex film analysis. On the basis of these studies were developed and released newly formulated abrasive-free Cu CMP solutions with a high Cu removal rate and excellent topography performance. Mechanism of polishing by applying abrasive-free Cu CMP solutions is also discussed in this paper.


2016 ◽  
Vol 160 ◽  
pp. 5-11 ◽  
Author(s):  
Xiaodong Luan ◽  
Yuling Liu ◽  
Chenwei Wang ◽  
Xinhuan Niu ◽  
Juan Wang ◽  
...  
Keyword(s):  

2019 ◽  
Vol 19 (7) ◽  
pp. 25-30 ◽  
Author(s):  
Neil Brahma ◽  
Mike Chan ◽  
Jan Talbot

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