scholarly journals Effect of a Au Overlayer on Thermal Stability of Pt Transparent Ohmic Contact on p-Type GaN

2002 ◽  
Vol 149 (4) ◽  
pp. G266 ◽  
Author(s):  
Jong Kyu Kim ◽  
Jong-Lam Lee
Keyword(s):  
Thermal Stability ◽  
Ohmic Contact ◽  
P Type ◽  
Thermal Stability Of

Zirconium Mediated Hydrogen Outdiffusion from p-GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
A. Barcz ◽  
J. Jasinski ◽  
M. Zielinski ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Behavior ◽  
Ohmic Contact ◽  
Contact System ◽  
P Type ◽  
Thermal Stability Of

AbstractWe have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

scholarly journals Zirconium Mediated Hydrogen Outdiffusion From p-GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 570-576
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
A. Barcz ◽  
J. Jasinski ◽  
M. Zielinski ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Behavior ◽  
Ohmic Contact ◽  
Contact System ◽  
P Type ◽  
Thermal Stability Of

We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

scholarly journals Influences of Bath Chemistry and Plating Variables on Characteristics of Electroless Ni–P Films on Si Wafers from Alkaline Citrate Solutions

2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Naiming Miao ◽  
Jinjin Jiang ◽  
Wangping Wu
Keyword(s):  
Thermal Stability ◽  
Chemical Composition ◽  
Deposition Rate ◽  
Electroless Nickel ◽  
Monocrystalline Silicon ◽  
P Content ◽  
Almost All ◽  
P Type ◽  
Electroless Ni ◽  
Thermal Stability Of

Electroless nickel–phosphorus (Ni–P) films were produced on the surface of p-type monocrystalline silicon in the alkaline citrate solutions. The influences of bath chemistry and plating variables on the chemical composition, deposition rate, morphology, and thermal stability of electroless Ni–P films on silicon wafers were studied. The as-deposited Ni–P films were almost all medium- and high-P deposits. The concentrations of Ni2+ and citric ions influenced the deposition rate of the films but did not affect P content in the deposits. With increasing H2PO2− content, the P content and deposition rate were steadily increased. The pH and plating temperature had a significant effect on the chemical composition and the deposition rate of the films. The thermal stability of the medium-P film was better than that of the high-P deposit. At the same time, the proposed mechanism of Ni–P films on monocrystalline silicon substrates in the alkaline bath solution was discussed and addressed.

Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

2015 ◽  
Vol 117 (2) ◽  
pp. 025703 ◽  
Author(s):  
Hailong Yu ◽  
Xufang Zhang ◽  
Huajun Shen ◽  
Yidan Tang ◽  
Yun Bai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
P Type ◽  
Thermal Stability Of

Structural Processes in Gold-Based Metallization During the Formation of Ohmic Contacts to GaSb

1995 ◽  
Vol 403 ◽  
Author(s):  
A. Piotrowska ◽  
E. Kańifiska ◽  
M. Guziewicz ◽  
E. Mizera ◽  
E. Dynowska ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Contact System ◽  
Contact Reaction ◽  
Annealing Behavior ◽  
Thermally Activated ◽  
Combined Use ◽  
Semiconductor System ◽  
Thermal Stability Of

AbstractAnnealing behavior of Au, AuZn, and AuSb metallization on GaSb have been investigated by the combined use of RBS, XRD, TEM, and I-V characterization. The results give evidence that the thermally activated contact reaction strongly depends on the particular elements incorporated in the Au layer. Pure Au reacts with GaSb at 100°C. The addition of Zn to Au metallization increases the thermal stability of the metallization/semiconductor system to 200°C. Antimony, forming with gold the AuSb2 phase in metallization, provides the most stable ohmic contact system.

Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC

2003 ◽  
Vol 433-436 ◽  
pp. 681-684 ◽  
Author(s):  
M.E. Samiji ◽  
A.M. Venter ◽  
A.W.R. Leitch
Keyword(s):  
Thermal Stability ◽  
Schottky Contacts ◽  
P Type ◽  
Thermal Stability Of

scholarly journals Study of thermal stability of p-type skutterudites DD0.7Fe3CoSb12 by Knudsen effusion mass spectrometry

RSC Advances ◽  
2019 ◽  
Vol 9 (37) ◽  
pp. 21451-21459
Author(s):  
František Zelenka ◽  
Pavel Brož ◽  
Jan Vřešťál ◽  
Jiří Buršík ◽  
Gerda Rogl ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Thermal Stability ◽  
Vapour Pressure ◽  
Knudsen Effusion ◽  
Knudsen Effusion Mass Spectrometry ◽  
P Type ◽  
Thermal Stability Of

Antimony vapour pressure is measured by Knudsen effusion mass spectrometry in order to assess the thermal stability of p-type DD0.7Fe3CoSb12 thermoelectrics.

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