Thermal stability of sol–gel p-type Al–N codoped ZnO films and electric properties of nanostructured ZnO homojunctions fabricated by spin-coating them on ZnO nanorods

2012 ◽  
Vol 60 (8) ◽  
pp. 3310-3320 ◽  
Author(s):  
T.-H. Yang ◽  
J.-M. Wu
Polymers ◽  
2020 ◽  
Vol 12 (9) ◽  
pp. 1935
Author(s):  
Ashraf H. Farha ◽  
Abdullah F. Al Naim ◽  
Shehab A. Mansour

Thermal degradation of polystyrene/ZnO (PS/ZnO) nanocomposites was investigated in this study. PS/ZnO polymer nanocomposites were prepared by using ZnO nanorods as nanofillers that were prepared via the sol-gel route. The as-prepared ZnO nanoparticles showed nanocrystallites in rod-like shapes with a non-uniform hexagonal cross-section and diameter varying from 40 to 75 nm. PS/ZnO nanocomposites with ZnO nanoparticles content ranging from 0–3 wt% are prepared via the common casting method. Even dispersion for ZnO nanoparticles within as-prepared PS/ZnO nanocomposites was verified through SEM/EDX measurements. Thermal degradation of the samples was checked by using the thermogravimetric (TG) analysis and differential scanning calorimetry (DSC) under non-isothermal conditions and a constant heating rate of 10 °C min. The thermal stability of the nanocomposite is elevated compared to that of pristine PS due to the addition of the ZnO nanoparticles. The homogeneity of the PS/ZnO nanocomposites is verified by systematic increases in thermal degradation with increasing ZnO content. The characterization degradation temperatures at different weight loss percentages of ZnO nanoparticles increase at high ZnO wt%. Static activation energy of decomposing is based on TGA data. Activation energies showed some enhancement after the addition of ZnO nanorods into the PS matrix. Enhancing the thermal stability of PS with ZnO addition within the investigated ZnO concentration range is verified by TG, DSC results.


2020 ◽  
Vol 10 (01n02) ◽  
pp. 2060018
Author(s):  
E. M. Bayan ◽  
T. G. Lupeiko ◽  
L. E. Pustovaya ◽  
M. G. Volkova

Sn-doped TiO2 nanomaterials were synthesized by sol–gel method. It was shown the phase compositions and phase transitions change with the introduction of different tin amounts (0.5–20[Formula: see text]mol.%). X-ray powder diffraction was used to study the effect of different tin amounts on the anatase–rutile phase transition. It was found that the introduction of ions increases the thermal stability of anatase modifications. The material’s photocatalytic activity was studied in reaction with a model pollutant (methylene blue) photodegradation under UV and visible light activation. The best photocatalytic properties were shown for material, which contains 5[Formula: see text]mol.% of Sn.


2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Naiming Miao ◽  
Jinjin Jiang ◽  
Wangping Wu

Electroless nickel–phosphorus (Ni–P) films were produced on the surface of p-type monocrystalline silicon in the alkaline citrate solutions. The influences of bath chemistry and plating variables on the chemical composition, deposition rate, morphology, and thermal stability of electroless Ni–P films on silicon wafers were studied. The as-deposited Ni–P films were almost all medium- and high-P deposits. The concentrations of Ni2+ and citric ions influenced the deposition rate of the films but did not affect P content in the deposits. With increasing H2PO2− content, the P content and deposition rate were steadily increased. The pH and plating temperature had a significant effect on the chemical composition and the deposition rate of the films. The thermal stability of the medium-P film was better than that of the high-P deposit. At the same time, the proposed mechanism of Ni–P films on monocrystalline silicon substrates in the alkaline bath solution was discussed and addressed.


2009 ◽  
Vol 480 (2) ◽  
pp. 908-911 ◽  
Author(s):  
E. Kin ◽  
T. Fukuda ◽  
S. Yamauchi ◽  
Z. Honda ◽  
H. Ohara ◽  
...  

2015 ◽  
Vol 117 (2) ◽  
pp. 025703 ◽  
Author(s):  
Hailong Yu ◽  
Xufang Zhang ◽  
Huajun Shen ◽  
Yidan Tang ◽  
Yun Bai ◽  
...  

2020 ◽  
Vol 978 ◽  
pp. 384-389
Author(s):  
Sritama Roy ◽  
Saswati Soumya Dash ◽  
Prasanna Kumar Sahu ◽  
Smita Mishra ◽  
Jyoti Prakash Kar

Zinc Oxide (ZnO) thin films were produced by the sol gel dip coating process on the p-type silicon substrate with various withdrawal speeds changing from 1 to 4 cm/min, respectively. The films were annealed at a temperature of 500 °C for an hour in air ambient. The thin film thickness was found to be raised with the rise in withdrawal speed. The uniform distribution of the grains was appeared for all the films. The evolution of c-axis oriented (002) peak was revealed from X-ray diffraction (XRD) studies. The microstructural and optical properties of ZnO films were investigated by Raman, FTIR and photoluminescence spectroscopy (PL). The resistive switching properties of ZnO based memristors were studied by performing the current-voltage (I-V) measurements, where the thin films coated with lower withdrawal speed, have shown better switching property with rapid rise and fall of current during SET and RESET process, respectively.


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