Structural Processes in Gold-Based Metallization During the Formation of Ohmic Contacts to GaSb

1995 ◽  
Vol 403 ◽  
Author(s):  
A. Piotrowska ◽  
E. Kańifiska ◽  
M. Guziewicz ◽  
E. Mizera ◽  
E. Dynowska ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Contact System ◽  
Contact Reaction ◽  
Annealing Behavior ◽  
Thermally Activated ◽  
Combined Use ◽  
Semiconductor System ◽  
Thermal Stability Of

AbstractAnnealing behavior of Au, AuZn, and AuSb metallization on GaSb have been investigated by the combined use of RBS, XRD, TEM, and I-V characterization. The results give evidence that the thermally activated contact reaction strongly depends on the particular elements incorporated in the Au layer. Pure Au reacts with GaSb at 100°C. The addition of Zn to Au metallization increases the thermal stability of the metallization/semiconductor system to 200°C. Antimony, forming with gold the AuSb2 phase in metallization, provides the most stable ohmic contact system.

Zirconium Mediated Hydrogen Outdiffusion from p-GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
A. Barcz ◽  
J. Jasinski ◽  
M. Zielinski ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Behavior ◽  
Ohmic Contact ◽  
Contact System ◽  
P Type ◽  
Thermal Stability Of

AbstractWe have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

scholarly journals Zirconium Mediated Hydrogen Outdiffusion From p-GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 570-576
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
A. Barcz ◽  
J. Jasinski ◽  
M. Zielinski ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Behavior ◽  
Ohmic Contact ◽  
Contact System ◽  
P Type ◽  
Thermal Stability Of

We have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.

Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

2015 ◽  
Vol 117 (2) ◽  
pp. 025703 ◽  
Author(s):  
Hailong Yu ◽  
Xufang Zhang ◽  
Huajun Shen ◽  
Yidan Tang ◽  
Yun Bai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
P Type ◽  
Thermal Stability Of

Effect of Pre-Strain Rolling on Annealing Behavior of Friction-Stir Welded AA6061-T6 Aluminum Alloy

2018 ◽  
Vol 385 ◽  
pp. 355-358 ◽  
Author(s):  
Sergey Mironov ◽  
Sergey Malopheyev ◽  
Igor Vysotskiy ◽  
Daria Zhemchuzhnikova ◽  
Rustam Kaibyshev
Keyword(s):  
Heat Treatment ◽  
Thermal Stability ◽  
Aluminum Alloy ◽  
Cold Rolling ◽  
Grain Growth ◽  
Rolling Schedule ◽  
Annealing Behavior ◽  
Friction Stir ◽  
Welding Direction ◽  
Thermal Stability Of

In this work, the effect of pre-strain cold rolling on thermal stability of friction-stir welded AA6061-T6 alloy was studied. The pre-strain rolling was found to be very effective in suppression of abnormal grain growth during standard post-weld T6 heat treatment. It was also shown that the efficiency of this approach essentially depends on rolling path and the rolling along welding direction was the most effective rolling schedule.

scholarly journals Thermal stability of low-resistance Au Ohmic contacts to GeTe

2017 ◽  
Vol 621 ◽  
pp. 145-150 ◽  
Author(s):  
Haila M. Aldosari ◽  
Kayla A. Cooley ◽  
Shih-Ying Yu ◽  
Katherine C. Kragh-Buetow ◽  
Suzanne E. Mohney
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
Thermal Stability Of

Thermal Stability of Ti/Pt/Au Non-Alloyed Ohmic Contacts on InN

1994 ◽  
Vol 337 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk
Keyword(s):  
Thermal Stability ◽  
Doping Level ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Contact Resistivity ◽  
High Doping Level ◽  
Transmission Line Method ◽  
Different Temperatures ◽  
Contact Resistivities ◽  
Thermal Stability Of

ABSTRACTExtremely low contact resistance of non-alloyed Ti/Pt/Au metallization on n-type InN is demonstrated. The contacts were annealed at different temperatures up to 420 °C to investigate their thermal stability. A low contact resistivity of 1.8 x 10-7 ohm-cm2 was measured at room temperature using the transmission line method. This was due to the extremely high doping level (5 x 1020 cm-3) in the InN. After 300 °C annealing, the contact resistivity increased to 2.4 x 10-7 ohm-cm2- For 360 °C annealing, the contact morphology showed some degradation, but the contact resistivity was almost the same as at 300 °C. There was serious degradation of the contacts after 420 °C annealing. The morphology became very rough, and the contact and sheet resistances increased by factors of 3-5 times. This degradation is believed due to the decomposition of the InN film. The contact resistivities between n-type epitaxial GaAs and InN were also investigated, and showed values around 10-4 ohm-cm2.

A structural analysis of the Pd/GaN ohmic contact annealing behavior

2002 ◽  
Vol 743 ◽  
Author(s):  
C. C. Kim ◽  
P. Ruterana ◽  
J. H. Je
Keyword(s):  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Structural Evolution ◽  
Electron Beam Evaporation ◽  
Intermetallic Phases ◽  
X Ray Diffraction ◽  
Annealing Behavior ◽  
X Ray ◽  
Transmission Electron ◽  
The Relationship

AbstractFor ohmic contact on p GaN, palladium is one of the best candidates showing ohmic characteristics already without annealing. To be realized in devices, it is necessary to know the behavior of the ohmic contacts at accelerated conditions, especially for high temperatures and power. We report on the structural evolution of palladium layers (30 nm) deposited on GaN (0001) by electron beam evaporation without intentional annealing. They were next cut into various pieces which were individually submitted to rapid thermal annealing at 400, 500, 600, 700 and 800°C for 10 sec. We investigate the differences in the microstructure and the location of interfacial phases and their relationships as determined by X-ray diffraction and transmission electron microscopy, we then suggest the formation mechanism based on the relationship. It is shown that the interface is disrupted at annealing above 600°C and by 800°C only very small patches of Pd are still present, however they area completely imbedded in a matrix of intermetallic phases (gallides) formed by the reaction with GaN.

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