Layer Inversion of Ni(Pt)Si on Mixed Phase Si Films

P. S. Lee; K. L. Pey; D. Mangelinck; J. Ding; T. Osipowicz; A. See

doi:10.1149/1.1447442

Analysis of Si-SiO2 Interfacial-Energy Hierarchy via Mixed-Phase Solidification of Si Films on SiO2

MRS Proceedings ◽

10.1557/opl.2015.823 ◽

2015 ◽

Vol 1770 ◽

pp. 55-60

Author(s):

Ying Wang ◽

Monica D. Chahal ◽

J. J. Wang ◽

A. B. Limanov ◽

A. M. Chitu ◽

...

Keyword(s):

Partial Melting ◽

Microstructure Evolution ◽

Interfacial Energy ◽

Thermodynamic Model ◽

Orientation Distribution ◽

Mixed Phase ◽

Hierarchical Order ◽

Interfacial Energies ◽

Si Films ◽

Melting And Solidification

ABSTRACTWe have experimentally investigated the anisotropy of Si-SiO2 interfacial energy by leveraging the mixed-phase solidification (MPS) method. By examining the microstructure evolution resulting from partial-melting-and-solidification cycles, and interpreting the changes in the surface-orientation distribution of the grains in terms of the thermodynamic model, we have identified the orientation-dependent hierarchical order of Si-SiO2 interfacial energies, σ{hkl}, as: σ{100} < σ{310} < σ{113} < σ{112} < σ{221} < σ{210}∼σ{331} < σ{111}, σ{110}.

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Structure of mixed-phase Si films studied by C-AFM and X-TEM

Journal of Physics Conference Series ◽

10.1088/1742-6596/61/1/158 ◽

2007 ◽

Vol 61 ◽

pp. 790-794

Author(s):

T Mates ◽

P C P Bronsveld ◽

A Fejfar ◽

B Rezek ◽

J Kočka ◽

...

Keyword(s):

Mixed Phase ◽

Si Films

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Microstructural Control Of Thin Film Si Using Low Energy, High Flux Ions In Reactive Magnetron Sputter Deposition

MRS Proceedings ◽

10.1557/proc-609-a5.3 ◽

2000 ◽

Vol 609 ◽

Cited By ~ 3

Author(s):

Jennifer E. Gerbi ◽

John R. Abelson

Keyword(s):

Flux Ratio ◽

Low Energy ◽

Mixed Phase ◽

Reactive Magnetron ◽

Ion Energy ◽

Silicon Thin Films ◽

Dc Reactive Magnetron Sputtering ◽

Magnetron Sputter Deposition ◽

Bombardment Energy ◽

Si Films

ABSTRACTUsing plasma growth sources with concurrent particle bombardment, silicon thin films can be deposited with various phases and microstructures. DC Reactive Magnetron Sputtering (RMS), in particular, can produce amorphous, mixed-phase, nanocrystalline, polycrystalline, porous columnar, and epitaxial Si films. In particular, a large flux of low energy, heavy ions strongly affects the phase and microstructure, and therefore the resulting film qualities. Lowpressure (1.6 mTorr) RMS is particularly suited for this type of plasma manipulation: we bias the substrate to produce the ion energy of choice, and use an external magnetic field to control the ion/neutral flux ratio, therefore decoupling the parameters of bombardment energy and flux. In this work, we study the influence of slow (<40eV), heavy (Ar+), ions in RMS deposition on the formation kinetics and microstructures of microcrystalline, mixed-phase, and poly crystalline Si films. The analytical methods are ellipsometry, Raman scattering, and AFM. We will show how ion bombardment influences the direct nucleation of extremely smooth polycrystalline Si on glass at temperatures below 400°C, enhances the crystallinity of this polycrystalline Si in the bulk, and produces nanocrystalline Si with tailored grain sizes at temperatures below 200°C.

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Crystallinity Analysis of Amorphous-Crystalline Mixed Phase Silicon films Using Exafs Method

MRS Proceedings ◽

10.1557/proc-283-555 ◽

1992 ◽

Vol 283 ◽

Cited By ~ 13

Author(s):

Masatoshi Wakagi ◽

Toshiki Kaneko ◽

Kiyoshi Ogata ◽

Asao Nakano

Keyword(s):

Raman Scattering ◽

Curve Fitting ◽

Crystalline Phase ◽

Mixed Phase ◽

Least Square ◽

Scattering Method ◽

Plasma Cvd ◽

Chemical Annealing ◽

Si Films ◽

Exafs Spectra

ABSTRACTThe crystalline phase fraction (Xc) of amorphous-crystalline mixed phase Si films prepared by thermal annealing of a-Si:H films and by plasma CVD and chemical annealing methods was investigated by the EXAFS method. The EXAFS spectra of these films were represented by linear-combination of a-Si:H and c-Si EXAFS spectra. The values of Xc were analyzed by least-square curve fitting. The crystallinity was also analyzed by a Raman scattering method measured from both sides of the films. Then, the Xc values analyzed by the Raman method were calibrated by the EXAFS analysis results.

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Detailed structural study of low temperature mixed-phase Si films by X-TEM and ambient conductive AFM

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2005.10.058 ◽

2006 ◽

Vol 352 (9-20) ◽

pp. 1011-1015 ◽

Cited By ~ 25

Author(s):

T. Mates ◽

P.C.P. Bronsveld ◽

A. Fejfar ◽

B. Rezek ◽

J. Kočka ◽

...

Keyword(s):

Low Temperature ◽

Structural Study ◽

Mixed Phase ◽

Conductive Afm ◽

Si Films

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Mixed-phase solidification of thin Si films on SiO2

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2010.05.037 ◽

2010 ◽

Vol 312 (19) ◽

pp. 2775-2778 ◽

Cited By ~ 14

Author(s):

James S. Im ◽

Monica Chahal ◽

P.C. van der Wilt ◽

U.J. Chung ◽

G.S. Ganot ◽

...

Keyword(s):

Mixed Phase ◽

Si Films

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Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100114104 ◽

1975 ◽

Vol 33 ◽

pp. 96-97

Author(s):

R. W. Ditchfield ◽

A. G. Cullis

Keyword(s):

Epitaxial Growth ◽

Electron Energy ◽

Silicon Substrates ◽

Secondary Phases ◽

Si Substrates ◽

Transmission Electron ◽

Layer Structures ◽

Si Films ◽

Electron Energy Loss ◽

Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

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Growth of near noble metal Pd and Pt thin film silicides morphology and structure

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100112464 ◽

1984 ◽

Vol 42 ◽

pp. 498-499

Author(s):

E. I. Alessandrini ◽

M. O. Aboelfotoh

Keyword(s):

Noble Metals ◽

Annealing Temperature ◽

Chemical Compounds ◽

Barrier Properties ◽

Solid State Reactions ◽

Transmission Electron ◽

Stable Chemical ◽

Metal Thickness ◽

Amorphous Si ◽

Si Films

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.

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