Surface Roughening in the Growth of Direct Current or Pulse Current Electrodeposited Nickel Thin Films

2001 ◽  
Vol 148 (12) ◽  
pp. C780 ◽  
Author(s):  
M. Saitou ◽  
W. Oshikawa ◽  
M. Mori ◽  
A. Makabe
2010 ◽  
Vol 163 ◽  
pp. 141-144 ◽  
Author(s):  
Adam Bunsch ◽  
S.J. Skrzypek ◽  
J. Kowalska ◽  
Wiktoria Ratuszek ◽  
W. Rakowski

Influence of the electrodepositing parameters e.g. applied electric current as variable on texture formation and on mechanical properties of copper thin films was studied. Experiment was done for copper deposition from sulphate bath under galvanostatic and pulse current. It was found that copper layers exhibits different texture depending on applied current conditions during electrodepositing process. Pulse and direct current conditions leads to different texture of electrodeposited copper. Texture of electrodeposited copper coatings and mechanical properties could be correlated. It was found that, texture indexes although are not complex information about texture could be used for analysis of such correlation in technological process.


2018 ◽  
Vol 2018.67 (0) ◽  
pp. 719
Author(s):  
Yuji EGAWA ◽  
Yuta MURASE ◽  
Keisuke TANAKA ◽  
Hirohisa KIMACHI

2009 ◽  
Vol 44 (13) ◽  
pp. 3520-3527 ◽  
Author(s):  
Amaresh Chandra Mishra ◽  
Awalendra K. Thakur ◽  
V. Srinivas

Author(s):  
L.J. Chen ◽  
Y.F. Hsieh

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.


Author(s):  
C. W. Price ◽  
E. F. Lindsey

Thickness measurements of thin films are performed by both energy-dispersive x-ray spectroscopy (EDS) and x-ray fluorescence (XRF). XRF can measure thicker films than EDS, and XRF measurements also have somewhat greater precision than EDS measurements. However, small components with curved or irregular shapes that are used for various applications in the the Inertial Confinement Fusion program at LLNL present geometrical problems that are not conducive to XRF analyses but may have only a minimal effect on EDS analyses. This work describes the development of an EDS technique to measure the thickness of electroless nickel deposits on gold substrates. Although elaborate correction techniques have been developed for thin-film measurements by x-ray analysis, the thickness of electroless nickel films can be dependent on the plating bath used. Therefore, standard calibration curves were established by correlating EDS data with thickness measurements that were obtained by contact profilometry.


1983 ◽  
Vol 44 (C5) ◽  
pp. C5-449-C5-454 ◽  
Author(s):  
P. Baeri ◽  
M. G. Grimaldi ◽  
E. Rimini ◽  
G. Celotti

1999 ◽  
Vol 353 (1-2) ◽  
pp. 194-200 ◽  
Author(s):  
C. Coupeau ◽  
J.F. Naud ◽  
F. Cleymand ◽  
P. Goudeau ◽  
J. Grilhé

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