Scaling behavior of internal stress in electrodeposited nickel thin films

2008 ◽  
Vol 104 (9) ◽  
pp. 093518 ◽  
Author(s):  
M. Saitou ◽  
S. Oshiro ◽  
Y. Sagawa
Keyword(s):  
Thin Films ◽  
Internal Stress ◽  
Scaling Behavior ◽  
Nickel Thin Films ◽  
Electrodeposited Nickel

Internal Stress In Sputtered Silver Nickel Thin Films And Multilayers: Sputtering Pressure And Thickness Effects

1999 ◽  
Vol 562 ◽  
Author(s):  
P. Gergaud ◽  
H. Yang ◽  
C. PéLissonnier-Grosjean ◽  
A. J. Bottger ◽  
P. Sandström ◽  
...  
Keyword(s):  
Thin Films ◽  
Internal Stress ◽  
Layer Thickness ◽  
Lattice Parameter ◽  
Free Lattice ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Nickel Thin Films ◽  
The Individual ◽  
20 Nm

ABSTRACTNanometer thick films are often in a state of high residual stress. This may strongly influence physical properties such as magnetic anisotropy. The aim of our study is to investigate whether the overall stress in multilayers may be tailored via the control of the sputtering parameters or of the individual thicknesses. The coatings investigated were deposited at room temperature by magnetron sputtering on oxidised silicon substrates. Ag/Ni multilayers of superperiod between 4 to 20 nm and thin films (Ag or Ni) 200 nm thick have been deposited under a krypton partial pressure varying between 1 and 8 mTorr. Internal stress measurements were performed by curvature method and x-ray diffraction sin2ψ method. The latter one allows the determination of the stress and of the stress-free lattice parameter in the Ag or the Ni layers whereas the first one gives rise to a measure of the average stress in the coating. The main results are the followings: (i) The stress in Ni thin films changes from compressive to tensile at a pressure between 2 and 5 mTorr whereas Ag thin films are sligthly tensile whatever the pressure; (ii) The stress in multilayers is tensile in Ag and Ni and decreases with sublayer thickness; (iii) The stress free lattice parameter of Ag in thin films or multilayers is independent of the Kr pressure and of the layer thickness and is equal to the bulk value; (iv) On the opposite, the stress-free lattice parameter of nickel decreases with the layer thickness in multilayers and is equal to the bulk value in thin films. These results are discussed in terms of the respective influence of interfacial intermixing and atomic peening mechanism.

Prediction of Notch Fatigue Limit in Electrodeposited Nickel Thin Films

2018 ◽  
Vol 2018.67 (0) ◽  
pp. 719
Author(s):  
Yuji EGAWA ◽  
Yuta MURASE ◽  
Keisuke TANAKA ◽  
Hirohisa KIMACHI
Keyword(s):  
Thin Films ◽  
Fatigue Limit ◽  
Nickel Thin Films ◽  
Electrodeposited Nickel

Effect of deposition parameters on microstructure of electrodeposited nickel thin films

2009 ◽  
Vol 44 (13) ◽  
pp. 3520-3527 ◽  
Author(s):  
Amaresh Chandra Mishra ◽  
Awalendra K. Thakur ◽  
V. Srinivas
Keyword(s):  
Thin Films ◽  
Nickel Thin Films ◽  
Deposition Parameters ◽  
Electrodeposited Nickel

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Analysis of electroless nickel thin films

1991 ◽  
Vol 49 ◽  
pp. 510-511 ◽  
Author(s):  
C. W. Price ◽  
E. F. Lindsey
Keyword(s):  
Thin Films ◽  
Inertial Confinement Fusion ◽  
Electroless Nickel ◽  
Inertial Confinement ◽  
Plating Bath ◽  
X Ray ◽  
Nickel Thin Films ◽  
Nickel Deposits ◽  
Confinement Fusion ◽  
Thickness Measurements

Thickness measurements of thin films are performed by both energy-dispersive x-ray spectroscopy (EDS) and x-ray fluorescence (XRF). XRF can measure thicker films than EDS, and XRF measurements also have somewhat greater precision than EDS measurements. However, small components with curved or irregular shapes that are used for various applications in the the Inertial Confinement Fusion program at LLNL present geometrical problems that are not conducive to XRF analyses but may have only a minimal effect on EDS analyses. This work describes the development of an EDS technique to measure the thickness of electroless nickel deposits on gold substrates. Although elaborate correction techniques have been developed for thin-film measurements by x-ray analysis, the thickness of electroless nickel films can be dependent on the plating bath used. Therefore, standard calibration curves were established by correlating EDS data with thickness measurements that were obtained by contact profilometry.

PULSED LASER IRRADIATION OF NICKEL THIN FILMS ON SILICON

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-449-C5-454 ◽  
Author(s):  
P. Baeri ◽  
M. G. Grimaldi ◽  
E. Rimini ◽  
G. Celotti
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Nickel Thin Films ◽  
Pulsed Laser Irradiation
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