Deformation and fracture in micro-tensile tests of freestanding electrodeposited nickel thin films

2008 ◽  
Vol 58 (12) ◽  
pp. 1062-1065 ◽  
Author(s):  
Y. Yang ◽  
N. Yao ◽  
W.O. Soboyejo ◽  
C. Tarquinio
Keyword(s):  
Thin Films ◽  
Tensile Tests ◽  
Nickel Thin Films ◽  
Deformation And Fracture ◽  
Electrodeposited Nickel

Hrem Study of Fracture and Deformation Behavior of Nanostructured Thin Films

1993 ◽  
Vol 308 ◽  
Author(s):  
Ming Ke ◽  
Walter W. Milligan ◽  
Stephen A. Hackney ◽  
John E. Carsley ◽  
Elias C. Aifantis
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Main Crack ◽  
Ion Beam ◽  
Electron Beam Evaporation ◽  
Triple Junctions ◽  
Nickel Thin Films ◽  
Grain Sizes ◽  
Deformation And Fracture ◽  
Boundary Triple

ABSTRACTNanocrystalline gold and nickel thin films were prepared by both ion beam sputter deposition and electron beam evaporation techniques. The grain sizes were between 8–60 nm, depending on the processing. The deformation and fracture behavior of these nanostructural thin films were then investigated in a high resolution electron microscope (HREM) with atomic resolution. The behavior was a strong function of grain size. During slow strain rate deformation of small grain size materials (< 25 nm), nanopores formed and grew at grain boundary triple junctions in the front of crack and eventually linked with the main crack. The coalescence of the main crack with the growing nanopore, along with the elimination of the ligament between the two by a diffusive process, both indicated that diffusion played a role in deformation and fracture of these nanocrystalline thin films. In nickel films with larger grain sizes (> 25 nm), the cracks propagated in a mixed mode which was partially intergranular and partially transgranular. The transgranular propagation was crystallographic in nature, showing very fine, distinct crystallographic facets on the crack faces. It is suggested that a transition from intergranular propagation to a “cleavage-like” mechanism of propagation occurs with the increase of grain size.

Prediction of Notch Fatigue Limit in Electrodeposited Nickel Thin Films

2018 ◽  
Vol 2018.67 (0) ◽  
pp. 719
Author(s):  
Yuji EGAWA ◽  
Yuta MURASE ◽  
Keisuke TANAKA ◽  
Hirohisa KIMACHI
Keyword(s):  
Thin Films ◽  
Fatigue Limit ◽  
Nickel Thin Films ◽  
Electrodeposited Nickel

Effect of deposition parameters on microstructure of electrodeposited nickel thin films

2009 ◽  
Vol 44 (13) ◽  
pp. 3520-3527 ◽  
Author(s):  
Amaresh Chandra Mishra ◽  
Awalendra K. Thakur ◽  
V. Srinivas
Keyword(s):  
Thin Films ◽  
Nickel Thin Films ◽  
Deposition Parameters ◽  
Electrodeposited Nickel

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Analysis of electroless nickel thin films

1991 ◽  
Vol 49 ◽  
pp. 510-511 ◽  
Author(s):  
C. W. Price ◽  
E. F. Lindsey
Keyword(s):  
Thin Films ◽  
Inertial Confinement Fusion ◽  
Electroless Nickel ◽  
Inertial Confinement ◽  
Plating Bath ◽  
X Ray ◽  
Nickel Thin Films ◽  
Nickel Deposits ◽  
Confinement Fusion ◽  
Thickness Measurements

Thickness measurements of thin films are performed by both energy-dispersive x-ray spectroscopy (EDS) and x-ray fluorescence (XRF). XRF can measure thicker films than EDS, and XRF measurements also have somewhat greater precision than EDS measurements. However, small components with curved or irregular shapes that are used for various applications in the the Inertial Confinement Fusion program at LLNL present geometrical problems that are not conducive to XRF analyses but may have only a minimal effect on EDS analyses. This work describes the development of an EDS technique to measure the thickness of electroless nickel deposits on gold substrates. Although elaborate correction techniques have been developed for thin-film measurements by x-ray analysis, the thickness of electroless nickel films can be dependent on the plating bath used. Therefore, standard calibration curves were established by correlating EDS data with thickness measurements that were obtained by contact profilometry.

PULSED LASER IRRADIATION OF NICKEL THIN FILMS ON SILICON

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-449-C5-454 ◽  
Author(s):  
P. Baeri ◽  
M. G. Grimaldi ◽  
E. Rimini ◽  
G. Celotti
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Nickel Thin Films ◽  
Pulsed Laser Irradiation

Atomic force microscopy of in situ deformed nickel thin films

1999 ◽  
Vol 353 (1-2) ◽  
pp. 194-200 ◽  
Author(s):  
C. Coupeau ◽  
J.F. Naud ◽  
F. Cleymand ◽  
P. Goudeau ◽  
J. Grilhé
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Nickel Thin Films ◽  
Atomic Force
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