Oxidation and Induced Damage in Oxygen Plasma In Situ Wafer Bonding

2000 ◽  
Vol 147 (7) ◽  
pp. 2699 ◽  
Author(s):  
Donato Pasquariello ◽  
Christer Hedlund ◽  
Klas Hjort
Keyword(s):  
Wafer Bonding ◽  
Oxygen Plasma

In Situ and Ex Situ Ellipsometric Characterization of Oxygen Plasma and UV Radiation Effects on Spacecraft Materials

1997 ◽  
Vol 502 ◽  
Author(s):  
C. L. Bungay ◽  
T. E. Tiwald ◽  
M. J. DeVries ◽  
B. J. Dworak ◽  
John A. Woollam
Keyword(s):  
Uv Radiation ◽  
Oxygen Plasma ◽  
Index Of Refraction ◽  
Uv Absorption ◽  
Ex Situ ◽  
Absorption Bands ◽  
Space Applications ◽  
Growth Trends ◽  
Ellipsometry Data

ABSTRACTAtomic Oxygen (AO) and ultraviolet (UV) radiation contribute (including synergistically) to degradation of spacecraft materials in Low Earth Orbit (LEO). NASA is, therefore, interested in determining what effects the harsh LEO environment has on materials exposed to it, as well as develop materials that are more AO and UV resistant. The present work involves the study of AO and UV effects on polyarylene ether benzimidazole (PAEBI) with in situ and ex situ spectroscopic ellipsometry. PAEBI is a polymer proposed for space applications due to its reported ability to form a protective phosphorous oxide on the surface when exposed to AO. In our experiments PAEBI was exposed to UV radiation from a xenon lamp while in situ ellipsometry data were acquired. The effects of UV radiation were modeled as an exponentially graded layer on the surface of bulk PAEBI. The change in UV absorption spectra, depth profile of the index of refraction, and growth trends of the UV irradiated PAEBI were all studied in these experiments. In addition, PAEBI was exposed to an oxygen plasma to simulate the synergistic effects of AO and UV. Ellipsometry data were acquired in-line with both a UV-Visible ellipsometer and an infrared ellipsometer. The change in UV absorption bands and index of refraction due to synergistic AO/UV, as well as the growth trends of the oxide layer were studied.

scholarly journals Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3968
Author(s):  
Cho ◽  
Cha ◽  
Kim
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Surface Condition ◽  
Chemical Vapor ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
Oxygen Plasma Treatment ◽  
High Electron ◽  
Threshold Voltage Shift

The influence of oxygen–plasma treatment on in situ SiN/AlGaN/GaN MOS high electron mobility transistor with SiO2 gate insulator was investigated. Oxygen–plasma treatment was performed on in situ SiN, before SiO2 gate insulator was deposited by plasma-enhanced chemical vapor deposition (PECVD). DC I-V characteristics were not changed by oxygen plasma treatment. However, pulsed I-V characteristics were improved, showing less dispersion compared to non-treated devices. During short-term gate bias stress, the threshold voltage shift was also smaller in a treated device than in an untreated one. X-ray photoemission spectroscopy also revealed that SiO2 on in situ SiN with oxygen–plasma treatment has an O/Si ratio close to the theoretical value. This suggests that the oxygen plasma treatment-modified surface condition of the SiN layer is favorable to SiO2 formation by PECVD.

Oxygen Plasma and Warm Nitric Acid Surface Activation for Low-Temperature Wafer Bonding

2006 ◽  
Vol 153 (12) ◽  
pp. G1099 ◽  
Author(s):  
Xuanxiong Zhang ◽  
Benoit Olbrechts ◽  
Jean-Pierre Raskin
Keyword(s):  
Nitric Acid ◽  
Low Temperature ◽  
Wafer Bonding ◽  
Oxygen Plasma ◽  
Surface Activation

Resistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition

2014 ◽  
Vol 116 (2) ◽  
pp. 663-669 ◽  
Author(s):  
Jian Zhang ◽  
Hui Yang ◽  
Qilong Zhang ◽  
Hao Jiang ◽  
Jikui Luo ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Oxygen Plasma ◽  
Atomic Layer ◽  
Ex Situ ◽  
Zno Thin Film ◽  
Layer Deposition

scholarly journals Adhesion of Polysilicon Microbeams in Controlled Humidity Ambients

1998 ◽  
Vol 518 ◽  
Author(s):  
M. P. de Boer ◽  
P. J. Clews ◽  
B. K. Smith ◽  
T. A. Michalske
Keyword(s):  
Atomic Force Microscopy ◽  
Relative Humidity ◽  
Oxygen Plasma ◽  
Rough Interface ◽  
Force Microscopy ◽  
Smooth Interface ◽  
Atomic Force ◽  
Adhesion Measurement ◽  
Exponential Trend

AbstractWe characterize in-situ the adhesion of surface micromachined polysilicon beams subject to controlled humidity ambients. Beams were freed by supercritical CO2drying. Consistent adhesion results were obtained using a post-treatment in an oxygen plasma which rendered the microbeams uniformly hydrophilic. Individual beam deformations were measured by optical interferometry after equilibration at a given relative humidity (RH). Validation of each adhesion measurement was accomplished by comparing the deformations with elasticity theory. The data indicates that adhesion increases exponentially with RH from 30% to 95%, with values from 1 mJ/m2 to 50 mJ/m2. Using the Kelvin equation, we show that the data should be independent of RH if a smooth interface is considered. By modeling a rough interface consistent with atomic force microscopy (AFM) data, the exponential trend is satisfactorily explained.

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