Electrochemical Behavior of Aluminum during Chemical Mechanical Polishing in Phosphoric Acid Base Slurry

2000 ◽  
Vol 147 (1) ◽  
pp. 149 ◽  
Author(s):  
Hong-Shi Kuo ◽  
Wen-Ta Tsai
Keyword(s):  
Phosphoric Acid ◽  
Electrochemical Behavior ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Acid Base

Electrochemical behavior of copper chemical mechanical polishing in KIO[sub 3] slurry

2002 ◽  
Vol 20 (2) ◽  
pp. 608 ◽  
Author(s):  
Jyh-Wei Hsu ◽  
Shao-Yu Chiu ◽  
Ming-Shih Tsai ◽  
Bau-Tong Dai ◽  
Ming-Shiann Feng ◽  
...  
Keyword(s):  
Electrochemical Behavior ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing

Fundamental Study of Iodate and Iodine Based Slurries for Copper CMP

2000 ◽  
Vol 613 ◽  
Author(s):  
Seung-Mahn Lee ◽  
Uday Mahajan ◽  
Zhan Chen ◽  
Rajiv K. Singh
Keyword(s):  
Potassium Iodide ◽  
Electrochemical Behavior ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Experimental Results ◽  
Fundamental Study ◽  
Copper Cmp

ABSTRACTThe chemical mechanical polishing of copper in several slurry chemistries based on iodate and iodine oxidizers has been investigated. Benzotriazole (BTA) and potassium iodide (KI) were used for preparing the polishing slurry chemistries based iodate. As observed by the anodic electrochemical behavior of copper and the surface analyses of EDS, it was determined that CuI layer formed in the iodate and iodine based solutions. Especially, in I2 slurry in pH 4, CuI layer formed very fast and uniformly, and passivated the copper. In addition, the highest removal rate using this slurry was obtained. These results were compared to H2O2 based slurries. From these experimental results, the slurry containing 0.1M KIO3 and 0.01M KI, and 0.01N I2 give better results than H2O2 based slurry in copper CMP.

scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

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