Behavior of Molybdenum in Silicon Evaluated for Integrated Circuit Processing

1999 ◽  
Vol 146 (5) ◽  
pp. 1929-1933 ◽  
Author(s):  
J. L. Benton ◽  
D. C. Jacobson ◽  
B. Jackson ◽  
J. A. Johnson ◽  
T. Boone ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Integrated Circuit Processing

Scanning Electron Microscope Induced Electrical Breakdown of Tungsten Windows in Integrated Circuit Processing

2004 ◽  
Author(s):  
David M. Shuttleworth ◽  
Mary Drummond Roby
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Contact Resistance ◽  
Integrated Circuit ◽  
Electrical Breakdown ◽  
Scanning Electron ◽  
Integrated Circuit Processing

Abstract Interaction of inline SEM inspections with tungsten window-1 integrity were investigated. Multiple SEMs were utilized and various points in the processing were inspected. It was found that in certain circumstances inline SEM inspection induced increased window-1 contact resistance in both source/drain and gate contacts, up to and including electrical opens for the source/drain contacts.

Compatibility of CO gas sensitive SnO2/Pt thin film with silicon integrated circuit processing

2000 ◽  
Vol 64 (1-3) ◽  
pp. 49-53 ◽  
Author(s):  
Rajnish K Sharma ◽  
Zhenan Tang ◽  
Philip C.H Chan ◽  
Johnny K.O Sin ◽  
I-Ming Hsing
Keyword(s):  
Thin Film ◽  
Integrated Circuit ◽  
Co Gas ◽  
Integrated Circuit Processing

Evaluation of the Stability on the New Alkaline Copper Bulk Slurry

2015 ◽  
Vol 645-646 ◽  
pp. 352-355
Author(s):  
Juan Wang ◽  
Ru Wang ◽  
Guo Dong Chen
Keyword(s):  
Integrated Circuit ◽  
Chemical Mechanical Polishing ◽  
Chelating Agent ◽  
Cost Effective ◽  
Mechanical Polishing ◽  
Oxidizing Agent ◽  
Low Dielectric ◽  
The Stability ◽  
Copper Polishing ◽  
Integrated Circuit Processing

At present, the chemical mechanical polishing is the only means for global planarization of an integrated circuit. After the node of the integrated circuit processing comes into 45nm, the diameter of wafer is 300mm, and the copper interconnect layer is above the 10 layer. In the same time the new low dielectric constant materials are used to the integrated circuit processing. That requires the property of the slurry used in the chemical mechanical polishing stricter. So the domestic and international companies carry out a series research works. Based on investigation and research for many years, the new alkaline copper rough slurry has been developed by the teachers and students in the Hebei University of Technology. The slurry has advantages as disadvantages. The composition of cost-effective slurry is simple and the effect of chemical mechanical polishing is good. But its stability is poor. In order to improve the stability, the compositions of the slurry need to adjust.The new alkaline copper rough slurry composed by abrasive, surface, chelating agent, oxidizing agent and deionized water. Experiments investigate the influence rule of copper polishing rate by the concentration of abrasive, the content of surface, the content of oxidizing agent and the content of chelating agent. The conclusion is arrived. When the concentration of abrasive is 4%, the content of surfactant is 10ml/l, the content of chelating agent is 10ml/l and the content of oxidizing agent is 5ml/l, the copper polishing rate keep 5000 Å /min.

'Smart integrated circuit processing

1989 ◽  
Vol 2 (4) ◽  
pp. 151-158 ◽  
Author(s):  
C.-Y. Fu ◽  
N.H. Chang ◽  
K.-K. Lin
Keyword(s):  
Integrated Circuit ◽  
Integrated Circuit Processing

The Deposition of Borophosphosilicate Glass Films by LPCVD Using 2,4,6,8 Tetramethylcyclotetrasiloxane

1990 ◽  
Vol 204 ◽  
Author(s):  
David L. O'Meara ◽  
Arthur K. Hochberg
Keyword(s):  
Integrated Circuit ◽  
Silicon Oxide ◽  
Chemical System ◽  
Safe Alternative ◽  
Liquid Source ◽  
Borophosphosilicate Glass ◽  
Reduced Pressures ◽  
Glass Films ◽  
Integrated Circuit Processing

ABSTRACTBorophosphosilicate glass (BPSG) films used in integrated circuit processing are grown from combinations of toxic and pyrophoric silane, diborane, and phosphine at atmospheric and reduced pressures. A safe, alternative chemical system has been developed with liquid source replacements for each dangerous gas. 2,4,6,8 tetramethylcyclotetrasiloxane (TMCTS) and oxygen are used as the silicon oxide sources, and trimethylphosphite (TMP) and trimethylborate (TMB) are the phosphorous and boron sources, respectively. Films grown in a hot wall LPCVD reactor with standard diffusion boats have thickness uniformities of ± 2 % and doping uniformities < ± 5 %.

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