High Aspect Ratio Trench Filling Using Two‐Step Subatmospheric Chemical Vapor Deposited Borophosphosilicate Glass for <0.18 μm Device Application

1999 ◽  
Vol 146 (5) ◽  
pp. 1884-1888 ◽  
Author(s):  
L. ‐Q. Xia ◽  
R. Conti ◽  
M. Galiano ◽  
F. Campana ◽  
S. Chandran ◽  
...  
RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).


2005 ◽  
Vol 152 (6) ◽  
pp. C408 ◽  
Author(s):  
Soo-Hyun Kim ◽  
Eui-Sung Hwang ◽  
Seung-Chul Ha ◽  
Seung-Ho Pyi ◽  
Ho-Jung Sun ◽  
...  

2017 ◽  
Vol 56 (6S2) ◽  
pp. 06HE02 ◽  
Author(s):  
Kohei Shima ◽  
Noboru Sato ◽  
Yuichi Funato ◽  
Yasuyuki Fukushima ◽  
Takeshi Momose ◽  
...  

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