Characterizations of Pulsed Chemical Vapor Deposited-Tungsten Thin Films for Ultrahigh Aspect Ratio W-Plug Process

2005 ◽  
Vol 152 (6) ◽  
pp. C408 ◽  
Author(s):  
Soo-Hyun Kim ◽  
Eui-Sung Hwang ◽  
Seung-Chul Ha ◽  
Seung-Ho Pyi ◽  
Ho-Jung Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Aspect Ratio ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

Growth, Structural and Mechanical Characterization and Reliability of Chemical Vapor Deposited Co and Co3O4 Thin Films as Candidate Materials for Sensing Applications

2011 ◽  
Vol 495 ◽  
pp. 108-111 ◽  
Author(s):  
Vasiliki P. Tsikourkitoudi ◽  
Elias P. Koumoulos ◽  
Nikolaos Papadopoulos ◽  
Costas A. Charitidis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Elastic Modulus ◽  
Data Storage ◽  
Mechanical Stability ◽  
Chemical Vapor ◽  
Magnetic Sensors ◽  
Functional Coatings ◽  
Sensing Applications ◽  
Chemical Vapor Deposited

The adhesion and mechanical stability of thin film coatings on substrates is increasingly becoming a key issue in device reliability as magnetic and storage technology driven products demand smaller, thinner and more complex functional coatings. In the present study, chemical vapor deposited Co and Co3O4thin films on SiO2and Si substrates are produced, respectively. Chemical vapor deposition is the most widely used deposition technique which produces thin films well adherent to the substrate. Co and Co3O4thin films can be used in innovative applications such as magnetic sensors, data storage devices and protective layers. The produced thin films are characterized using nanoindentation technique and their nanomechanical properties (hardness and elastic modulus) are obtained. Finally, an evaluation of the reliability of each thin film (wear analysis) is performed using the hardness to elastic modulus ratio in correlation to the ratio of irreversible work to total work for a complete loading-unloading procedure.

Organometallic chemical vapor deposited (OMCVD) thin films of YBa2Cu3O7−x (YBCO) on MgO and on YSZ buffer layers deposited on sapphire

1991 ◽  
Vol 185-189 ◽  
pp. 2093-2094 ◽  
Author(s):  
S. Chocron ◽  
T. Tsach ◽  
M. Parizh ◽  
M. Schieber ◽  
G. Deutscher ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Chemical Vapor Deposited

Hot wire chemical vapor deposited multiphase silicon carbide (SiC) thin films at various filament temperatures

2016 ◽  
Vol 27 (12) ◽  
pp. 12340-12350 ◽  
Author(s):  
Amit Pawbake ◽  
Vaishali Waman ◽  
Ravindra Waykar ◽  
Ashok Jadhavar ◽  
Ajinkya Bhorde ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Chemical Vapor Deposited

Oxidation of PECVD SiC Deposited from Trimethylsilane

1998 ◽  
Vol 555 ◽  
Author(s):  
Peter A. DiFonzo ◽  
Mona Massuda ◽  
James T. Kelliher
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Sic Films ◽  
Deposition Conditions

AbstractThe stoichiometric composition and oxidation rates ( wet or dry ) of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC) films are effected by the deposition conditions of trimethylsilane (3MS) and carrier gas. We report the oxidation kinetics of SiC thin films deposited in a modified commercial PECVD reactor. A standard horizontal atmospheric furnace in the temperature range of 925–1100°C was used in the oxidation. Oxidized films were measured optically by commercially available interferometer and ellipsometer tools in addition to mechanically using a commercially available profilometer. Activation energies of the parabolic rates were in the range of 20.93 to 335.26 kJ/mol.

Characterization of chemical-vapor-deposited low-k thin films using x-ray porosimetry

2003 ◽  
Vol 82 (7) ◽  
pp. 1084-1086 ◽  
Author(s):  
Hae-Jeong Lee ◽  
Eric K. Lin ◽  
Barry J. Bauer ◽  
Wen-li Wu ◽  
Byung Keun Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

Conductance in Microcrystalline BbxCx/Si Heterojunction Diodes

1992 ◽  
Vol 283 ◽  
Author(s):  
Sunwoo Lee ◽  
Thuong Ton ◽  
D. Zych ◽  
P. A. Dowben
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Electronic Material ◽  
Boron Carbide ◽  
Band Gap ◽  
Reverse Current ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Chemical Vapor Deposited ◽  
Heterojunction Diodes

ABSTRACTPlasma-enhanced chemical vapor deposited boron carbide (B1-xCx) thin films are shown to be a potential electronic material suitable for high temperature devices. The boron carbide films make excellent p-n heteroj unction diodes with /i-type silicon substrates. The B1-xCx/Si heteroj unction diodes are demonstrated to have rectifying properties at temperatures above 200°C and reverse current is strongly dependent on the energy of the band gap of the boron carbide films.

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