Sample Preparation of InGaAsP/InP‐Based Lasers for Plan‐View Transmission Electron Microscopy Using Selective Chemical Thinning

1999 ◽  
Vol 146 (2) ◽  
pp. 758-760 ◽  
Author(s):  
Thomas Kallstenius
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Plan View ◽  
Transmission Electron ◽  
Selective Chemical

Structural Investigation of Photoluminescent Porous Si by Transmission Electron Microscopy

1992 ◽  
Vol 281 ◽  
Author(s):  
S. Shih ◽  
K. H. Jung ◽  
D. L. Kwong
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Structural Investigation ◽  
Amorphous Material ◽  
Porous Si ◽  
Plan View ◽  
Mesh Structure ◽  
Transmission Electron ◽  
Minimal Damage

ABSTRACTWe have developed a new, minimal damage approach for examination of luminescent porous Si layers (PSLs) by transmission electron microscopy (TEM). In this approach, chemically etched PSLs are fabricated after conventional plan-view TEM sample preparation. A diffraction pattern consisting of a diffuse center spot, characteristic of amorphous material, is primarily observed. However, crystalline, microcrystalline, and amorphous regions could all be observed in selected areas. A crystalline mesh structure could be observed in some of the thin areas near the pinhole. The microcrystallite sizes were 15–150 Å and decreased in size when located further from the pinhole.

scholarly journals Optimized Sample Preparation for the Imaging of Silicon Defects using Plan View Transmission Electron Microscopy

2009 ◽  
Vol 15 (S2) ◽  
pp. 360-361
Author(s):  
N Wang ◽  
A Myers ◽  
M Sidorov ◽  
H Koo ◽  
C Yuan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Plan View ◽  
Transmission Electron ◽  
Silicon Defects

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Two-View Small-Angle Wedge Sample Preparation By Hand Tools For Transmission Electron Microscopy Of Semiconductors And Related Materials

1997 ◽  
Vol 480 ◽  
Author(s):  
Suli Suder ◽  
C. A. Faunce ◽  
S. E. Donnelly
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Small Angle ◽  
Hand Tools ◽  
Cross Sectional ◽  
Plan View ◽  
Tin Films ◽  
Transmission Electron ◽  
Ion Implanted

AbstractVarious small-angle wedge two-view samples have been prepared by a small-angle cleavage technique using hand tools and examined by transmission electron microscopy. Cleaved wedges from the same material are mounted both as plan-view and cross-sectional samples on the same TEM specimen grid allowing convenient examination in both views. Samples of Si3N4, Zr, Co and TiN/CN/TiN films deposited on Si, and He ion implanted Si prepared by this technique are shown to be suitable for analysis in the TEM.

The Focused Ion Beam Fold-Out: Sample Preparation Method for Transmission Electron Microscopy

2009 ◽  
Vol 15 (6) ◽  
pp. 558-563 ◽  
Author(s):  
Herman Carlo Floresca ◽  
Jangbae Jeon ◽  
Jinguo G. Wang ◽  
Moon J. Kim
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Milling ◽  
Plan View ◽  
Site Specific ◽  
Area Of Interest ◽  
Transmission Electron

AbstractWe have developed the focused ion beam (FIB) fold-out technique, for transmission electron microscopy (TEM) sample preparation in which there is no fine polishing or dimpling, thus saving turnaround time. It does not require a nanomanipulator yet is still site specific. The sample wafer is cut to shape, polished down, and then placed in a FIB system. A tab containing the area of interest is created by ion milling and then “folded out” from the bulk sample. This method also allows a plan-view of the sample by removing material below the wafer's surface film or device near the polished edge. In the final step, the sample is thinned to electron transparency, ready to be analyzed in the TEM. With both a cross section and plan-view, our technique gives microscopists a powerful tool in analyzing multiple zone axes in one TEM session. The nature of the polished sample edge also includes the ability to sample many areas, allowing the user to examine a very large device or sample. More importantly, this technique could make multiple site-specific e-beam transparent specimens in one polished sample, which is difficult to do when prepared by other methods.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

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