Large Area Plan-View Transmission Electron Microscopy Sample Preparation for Direct-Bonded Interfaces

2014 ◽  
Vol 64 (5) ◽  
pp. 161-166
Author(s):  
B. Beekley ◽  
C. R. Roberts ◽  
M. S. Salazar ◽  
M. S. Goorsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Transmission Electron Microscopy Sample ◽  
Large Area ◽  
Plan View ◽  
Transmission Electron

Structural Investigation of Photoluminescent Porous Si by Transmission Electron Microscopy

1992 ◽  
Vol 281 ◽  
Author(s):  
S. Shih ◽  
K. H. Jung ◽  
D. L. Kwong
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Structural Investigation ◽  
Amorphous Material ◽  
Porous Si ◽  
Plan View ◽  
Mesh Structure ◽  
Transmission Electron ◽  
Minimal Damage

ABSTRACTWe have developed a new, minimal damage approach for examination of luminescent porous Si layers (PSLs) by transmission electron microscopy (TEM). In this approach, chemically etched PSLs are fabricated after conventional plan-view TEM sample preparation. A diffraction pattern consisting of a diffuse center spot, characteristic of amorphous material, is primarily observed. However, crystalline, microcrystalline, and amorphous regions could all be observed in selected areas. A crystalline mesh structure could be observed in some of the thin areas near the pinhole. The microcrystallite sizes were 15–150 Å and decreased in size when located further from the pinhole.

Transmission Electron Microscopy Sample Preparation By Design Based Recipe Writing in a DBFIB Part 2

2019 ◽  
Author(s):  
J. Demarest ◽  
B. Austin ◽  
J. Arjavac ◽  
M. Breton ◽  
M. Bergendahl ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Unique Feature ◽  
Sample Thickness ◽  
Transmission Electron Microscopy Sample ◽  
Transmission Electron ◽  
Placement Accuracy ◽  
2D Arrays ◽  
Scanning Electron

Abstract Demarest et al. concluded in their previous report that a ten times improvement in placement accuracy was required to enable automated transmission electron microscopy (TEM) sample preparation, and wafer alignment by GDS coordinates demonstrated a factor of two improvement in comparison to optical or scanning electron microscope based processes. This paper provides an additional update on this project. The study is about a GDS based process developed to simplify the complicated workflow for examining discrete electrical failures. The results of this study indicated that the recipe prototype developed on a test structure had a unique feature that consisted of an approximately 45nm by 200nm Cu line segment. Executing the prototype recipe on a wafer at the same process point fabricated 6 months after the original wafer yielded four identical successful samples of about 30nm sample thickness. This technique can thus be extended to large 2D arrays of small structures.

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