Common-Base Operation of GaN Bipolar Junction Transistors

1999 ◽  
Vol 3 (7) ◽  
pp. 333 ◽  
Author(s):  
X. A. Cao
Keyword(s):  
Bipolar Junction Transistors ◽  
Common Base ◽  
Base Operation

High common-emitter current gains obtained by pnp GaN bipolar junction transistors

2001 ◽  
Vol 693 ◽  
Author(s):  
Kazuhide Kumakura ◽  
Toshiki Makimoto ◽  
Naoki Kobayashi
Keyword(s):  
Bipolar Junction Transistors ◽  
Base Thickness ◽  
Emitter Current ◽  
Base Current ◽  
Common Base ◽  
Current Voltage ◽  
Device Structures ◽  
Maximum Current ◽  
Current Voltage Characteristics ◽  
The Common

AbstractWe fabricated pnp GaN bipolar junction transistors and investigated their common-emitter and common-base current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its electron concentration was estimated to be 3 × 1017 cm-3 from the common-emitter current-voltage characteristics and the base conductivity. The common-emitter current-voltage characteristics showed very low leak current. The maximum current gains at room temperature were 50 and 69 from the common-emitter and the common-base current-voltage characteristics, respectively.

Der deutsche Dativ genealogisch und diachron

2021 ◽  
Vol 143 (1) ◽  
pp. 51-111
Author(s):  
Michail L. Kotin
Keyword(s):  
Language Change ◽  
Multiple Functions ◽  
The Third ◽  
Dative Case ◽  
Common Base ◽  
The Subject

Abstract The German dative case from genealogic and diachronic perspective. A language-change study about the third case. The dative case belongs to the so-called syncretistic cases, i. e., it encodes multiple functions inherited from the Indo-European cases locative, instrumental, ablative and dative. The paper aims to show the emergence of diverse case functions formally encoded by the dative case from a common base which is assumed to have the locative semantics. The decisive point was, according to the hypothesis, the development of the directional function towards the object or away from it. The addressee dative arose as a result of a specific reanalysis of movement semantics. The so-called dative of subject emerged from reanalysis of the subject-related experiencer function.

Parallel algorithms for matroid intersection and matroid parity

2015 ◽  
Vol 07 (02) ◽  
pp. 1550019
Author(s):  
Jinyu Huang
Keyword(s):  
Parallel Algorithms ◽  
Polynomial Identity ◽  
Black Box ◽  
Matroid Intersection ◽  
Polynomial Identity Testing ◽  
Identity Testing ◽  
Common Base ◽  
Graphic Matroid ◽  
Matroid Parity ◽  
Nc Algorithms

A maximum linear matroid parity set is called a basic matroid parity set, if its size is the rank of the matroid. We show that determining the existence of a common base (basic matroid parity set) for linear matroid intersection (linear matroid parity) is in NC2, provided that there are polynomial number of common bases (basic matroid parity sets). For graphic matroids, we show that finding a common base for matroid intersection is in NC2, if the number of common bases is polynomial bounded. To our knowledge, these algorithms are the first deterministic NC algorithms for matroid intersection and matroid parity. We also give a new RNC2 algorithm that finds a common base for graphic matroid intersection. We prove that if there is a black-box NC algorithm for Polynomial Identity Testing (PIT), then there is an NC algorithm to determine the existence of a common base (basic matroid parity set) for linear matroid intersection (linear matroid parity).

scholarly journals Total Dose Effects on 4H-SiC Bipolar Junction Transistors

2017 ◽  
Vol 897 ◽  
pp. 579-582
Author(s):  
Sethu Saveda Suvanam ◽  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Carl Mikael Zetterling ◽  
Anders Hallén
Keyword(s):  
Total Dose ◽  
Detailed Analysis ◽  
Surface Recombination ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Displacement Damage ◽  
Base Current ◽  
Dose Effects ◽  
Order Of Magnitude ◽  
Total Dose Effects

In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×1011, 1×1012 and 1×1013 cm-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10-15 cm2, which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.

The Nb–Al technology at PTB – a common base for different types of Josephson voltage standards

2001 ◽  
Vol 354 (1-4) ◽  
pp. 66-70 ◽  
Author(s):  
F. Müller ◽  
H. Schulze ◽  
R. Behr ◽  
J. Kohlmann ◽  
J. Niemeyer
Keyword(s):  
Common Base ◽  
Different Types

1800 V NPN bipolar junction transistors in 4H-SiC

2001 ◽  
Vol 22 (3) ◽  
pp. 124-126 ◽  
Author(s):  
Sei-Hyung Ryu ◽  
A.K. Agarwal ◽  
R. Singh ◽  
J.W. Palmour
Keyword(s):  
Bipolar Junction Transistors
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