Thermal Stability of Sputter-Deposited TiSi[sub 2] Films with Crystal Orientation

1999 ◽  
Vol 2 (12) ◽  
pp. 642 ◽  
Author(s):  
Dae-Gyu Park
2009 ◽  
Vol 93 (3) ◽  
pp. 315-323 ◽  
Author(s):  
Harish C. Barshilia ◽  
N. Selvakumar ◽  
G. Vignesh ◽  
K.S. Rajam ◽  
A. Biswas

2005 ◽  
Vol 87 (23) ◽  
pp. 233116 ◽  
Author(s):  
X. Zhang ◽  
A. Misra ◽  
H. Wang ◽  
J. G. Swadener ◽  
A. L. Lima ◽  
...  

2009 ◽  
Vol 311 (2) ◽  
pp. 282-285 ◽  
Author(s):  
Takahiro Hiramatsu ◽  
Mamoru Furuta ◽  
Hiroshi Furuta ◽  
Tokiyoshi Matsuda ◽  
Chaoyang Li ◽  
...  

2008 ◽  
Vol 1079 ◽  
Author(s):  
Kazuya Okubo ◽  
Kazuo Kawamura ◽  
Shinich Akiyama ◽  
Yasutoshi Kotaka ◽  
Tsukasa Itani ◽  
...  

ABSTRACTWe report NiSi and Ni(Pt)Si films with excellent thermal stability showing a particular crystal orientation on Si(001). The Ni-silicide film with a deposition temperature of about 200 °C consists of a conformal domain structure. We examined detail crystallographic analysis of silicide and clarified the psudo-epitaxial growth of NiSi(202)//Si(220) [or NiSi(211)//Si(220)] was the key scheme of superior thermal stability. By using this optimized Ni-silicide formation process, we have fabricated Ni-silicide that is thermally stable up to 650 °C and shows low fluctuation in sheet resistance and low leakage current in electrical measurements. This process is a promising candidate for future silicidation technology.


2007 ◽  
Vol 101 (11) ◽  
pp. 114108 ◽  
Author(s):  
P. Sivasubramani ◽  
J. Kim ◽  
M. J. Kim ◽  
B. E. Gnade ◽  
R. M. Wallace

2006 ◽  
Vol 89 (15) ◽  
pp. 152903 ◽  
Author(s):  
P. Sivasubramani ◽  
J. Kim ◽  
M. J. Kim ◽  
B. E. Gnade ◽  
R. M. Wallace

2019 ◽  
Vol 783 ◽  
pp. 208-218 ◽  
Author(s):  
Imane Souli ◽  
Georg C. Gruber ◽  
Velislava L. Terziyska ◽  
Johannes Zechner ◽  
Christian Mitterer

1995 ◽  
Vol 24 (2) ◽  
pp. 83-86 ◽  
Author(s):  
Y. Song ◽  
E. S. Kim ◽  
A. Kapila

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