Thermal Stability of Sputtered Tungsten Carbide as Diffusion Barrier for Copper Metallization

2001 ◽  
Vol 148 (9) ◽  
pp. G500 ◽  
Author(s):  
Shui Jinn Wang ◽  
Hao Yi Tsai ◽  
S. C. Sun ◽  
M. H. Shiao
2006 ◽  
Vol 914 ◽  
Author(s):  
Xin-Ping Qu ◽  
Jing-Jing Tan ◽  
Mi Zhou ◽  
Tao Chen ◽  
Guo-Ping Ru ◽  
...  

AbstractThe diffusion barrier properties for ultrathin Ru/Ta and Ru/TaN bilayer structure as the copper diffusion barrier are compared. Cu, Ru, Ta and TaN thin films are deposited by using the ion beam sputtering technique. The experimental results show that the thermal stability of the Cu/Ru/Ta or TaN /Si structure is much more improved than that of the Cu/Ru/Si structure without the interlayer. However, the Cu/Ru/TaN/Si shows better thermal stability than the Cu/Ru/Ta/Si structure, which should be attributed to the amorphous nature of the TaN interlayer. The microstructure evolution of the Cu/Ru/Ta (TaN)/Si structure during annealing is discussed. The results show that the Ru/TaN bilayer can be a very promising diffusion barrier in the future seedless Cu interconnect technology.


1997 ◽  
Author(s):  
YongTae Kim ◽  
Dong J. Kim ◽  
Chang W. Lee ◽  
Jong-Wan Park

2020 ◽  
Vol 527 ◽  
pp. 146810
Author(s):  
Y. Meng ◽  
Z.X. Song ◽  
Y.H. Li ◽  
D. Qian ◽  
W. Hu ◽  
...  

2011 ◽  
Vol 19 (22) ◽  
pp. 21849 ◽  
Author(s):  
Jingtao Zhu ◽  
Sika Zhou ◽  
Haochuan Li ◽  
Zhanshan Wang ◽  
Philippe Jonnard ◽  
...  

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1343-1351 ◽  
Author(s):  
Kow-Ming Chang ◽  
I-Chung Deng ◽  
Ta-Hsun Yeh ◽  
Kuen-Der Lain ◽  
Chao-Ming Fu

2019 ◽  
Vol 773 ◽  
pp. 482-489 ◽  
Author(s):  
Rongbin Li ◽  
Minxu Li ◽  
Chunxia Jiang ◽  
Bangwei Qiao ◽  
Weiwei Zhang ◽  
...  

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