Crystal Growth of Epitaxial 3C-SiC Thin Film on Si Substrate by Chemical Vapor Deposition using Single Precursor of Vinylsilane

2020 ◽  
Vol 98 (5) ◽  
pp. 169-176
Author(s):  
Takuma Doi ◽  
Kentaro Hashimoto ◽  
Wakana Takeuchi ◽  
Osamu Nakatsuka
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Crystal Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Single Precursor

Formation of Nanocrystalline Si by Au-Catalyzed CH3SiH3 Pulse Jet CVD

2013 ◽  
Vol 750 ◽  
pp. 244-247
Author(s):  
Toshiaki Abe ◽  
Shouhei Anan ◽  
Fumiya Watanabe ◽  
Ryoji Takahashi ◽  
Yoshifumi Ikoma
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Oxide Layer ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Pulse Jet ◽  
Nanocrystalline Si ◽  
Au Thin Film

Au-catalyzed growth of nanocrystalline Si by pulse jet chemical vapor deposition has been investigated. Au thin film was first deposited on thermally oxidized Si(100), then CH3SiH3 pulse jets were irradiated onto the Au/SiO2/Si(100) surface. The irradiation of the CH3SiH3 jets at 1150 °C resulted in circular patterns with a diameter of ~40 µm on the sample surfaces. In the center of the circular patterns, agglomerations of Au were observed. It was found that the oxide layer was etched and that nanocrystalline Si with diameters ~500 nm was formed in the circular patterns. These results indicate that the nanocrystalline Si was grown by the VLS process in which Si atoms were supplied from the oxide layer, Si substrate, and CH3SiH3 molecules.

scholarly journals Effect of Si and SiO2Substrates on the Geometries of As-Grown Carbon Coils

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Semi Park ◽  
Sung-Hoon Kim ◽  
Tae-Gyu Kim
Keyword(s):  
Thin Film ◽  
Thermal Expansion ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quartz Substrate ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Thermal Chemical Vapor Deposition ◽  
Surface Morphologies

Carbon coils could be synthesized using C2H2/H2as source gases and SF6as an incorporated additive gas under thermal chemical vapor deposition system. Si substrate, SiO2thin film deposited Si substrate (SiO2substrate), and quartz substrate were employed to elucidate the effect of substrate on the formation of carbon coils. The characteristics (formation densities, morphologies, and geometries) of the deposited carbon coils on the substrate were investigated. In case of Si substrate, the microsized carbon coils were dominant on the substrate surface. While, in case of SiO2substrate, the nanosized carbon coils were prevailing on the substrate surface. The surface morphologies of samples were investigated step by step during the reaction process. The cause for the different geometry formation of carbon coils according to the different substrates was discussed in association with the different thermal expansion coefficient values of Si and SiO2substrates and the different etched characteristics of Si and SiO2substrates by SF6 + H2flow.

Metalorganic chemical vapor deposition of TiO2:N anatase thin film on Si substrate

1995 ◽  
Vol 66 (7) ◽  
pp. 815-816 ◽  
Author(s):  
Dong Heon Lee ◽  
Yong Soo Cho ◽  
Woul In Yi ◽  
Tae Song Kim ◽  
Jeon Kook Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Metalorganic Chemical

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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