Discussion on the Figures of Merit of Identified Traps Located in the Si Film: Surface Versus Volume Trap Densities

2020 ◽  
Vol 97 (5) ◽  
pp. 45-51
Author(s):  
Bogdan Cretu ◽  
Beya Nafaa ◽  
Eddy Simoen ◽  
Geert Hellings ◽  
Dimitri Linten ◽  
...  
Keyword(s):  
Film Surface ◽  
Figures Of Merit ◽  
Surface Versus

Discussion on the Figures of Merit of Identified Traps Located in the Si Film: Surface Versus Volume Trap Densities

2020 ◽  
Vol MA2020-01 (24) ◽  
pp. 1372-1372
Author(s):  
Bogdan Cretu ◽  
Beya Nafaa ◽  
Eddy Simoen ◽  
Geert Hellings ◽  
Dimitri Linten ◽  
...  
Keyword(s):  
Film Surface ◽  
Figures Of Merit ◽  
Surface Versus

Comparison of particle measurement tools for use with photoresist: film surface versus liquid techniques

1996 ◽  
Author(s):  
Michael Anderson ◽  
Susan Bablouzian ◽  
Michael Gaudet ◽  
Linda L. Kenyon ◽  
Pamela Turci
Keyword(s):  
Film Surface ◽  
Surface Versus ◽  
Measurement Tools ◽  
Particle Measurement ◽  
Photoresist Film

The Shadow Widths of Very Small Particles are Formed Independently of the Metal Cap Build Up on the Particle

1981 ◽  
Vol 39 ◽  
pp. 568-569
Author(s):  
George C. Ruben
Keyword(s):  
Gold Particle ◽  
Film Surface ◽  
Small Particles ◽  
Geometric Process ◽  
Metal Free ◽  
Shadow Area

The formation of shadows behind small particles has been thought to be a geometric process (GP) where the metal cap build up on the particle creates a shadow width the same size as or larger than the particle. This GP cannot explain why gold particle shadow widths are generally larger than the gold particle and may have no appreciable metal cap build up (fig. 1). Ruben and Telford have suggested that particle shadow widths are formed by the width dependent deflection of shadow metal (SM) lateral to and infront of the particle. The trajectory of the deflected SM is determined by the incoming shadow angle (45°). Since there can be up to 1.4 times (at 45°) more SM directly striking the particle than the film surface, a ridge of metal nuclei lateral to and infront of the particle can be formed. This ridge in turn can prevent some SM from directly landing in the metal free shadow area. However, the SM that does land in the shadow area (not blocked by the particle or its ridge) does not stick and apparently surface migrates into the SM film behind the particle.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

Proteins and direct methods

1991 ◽  
Vol 197 (3-4) ◽  
Author(s):  
Fan Hai-fu ◽  
Hao Quan ◽  
M. M. Woolfson
Keyword(s):  
First Principles ◽  
Figure Of Merit ◽  
Direct Methods ◽  
Large Structure ◽  
Low Resolution ◽  
Figures Of Merit ◽  
Large Structures ◽  
Resolution Data

AbstractConventional direct methods, which work so well for small structures, are less successful for macromolecules. Where it has been demonstrated that a solution might be found using direct methods it is then found that the usual figures of merit are unable to distinguish the few good sets of phases from the large number of sets generated. The reasons for the difficulties with very large structures are considered from a first-principles approach taking into account both the factors of having a large number of atoms and low resolution data. A proposal is made for trying to recognize good phase sets by taking a large structure as a sum of a number of smaller structures for each of which a conventional figure of merit can be applied.

Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe.

2002 ◽  
Vol 719 ◽  
Author(s):  
Galina Khlyap
Keyword(s):  
Room Temperature ◽  
Film Surface ◽  
Charge Carriers ◽  
Barrier Structure ◽  
Free Charge ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Laser Engineering ◽  
Charged Defects ◽  
Epilayer Surface

AbstractRoom-temperature electric investigations carried out in CO2-laser irradiated ZnCdHgTe epifilms revealed current-voltage and capacitance-voltage dependencies typical for the metal-semiconductor barrier structure. The epilayer surface studies had demonstrated that the cell-like relief has replaced the initial tessellated structure observed on the as-grown samples. The detailed numerical analysis of the experimental measurements and morphological investigations of the film surface showed that the boundaries of the cells formed under the laser irradiation are appeared as the regions of accumulation of derived charged defects of different type of conductivity supplying free charge carriers under the applied electric field.

Parallel Glide: A Fundamentally Different Type of Dislocation Motion in Ultrathin Metal Films

2003 ◽  
Vol 779 ◽  
Author(s):  
T. John Balk ◽  
Gerhard Dehm ◽  
Eduard Arzt
Keyword(s):  
Thermal Cycling ◽  
Grain Boundaries ◽  
Film Surface ◽  
Metal Films ◽  
Geometric Constraints ◽  
Film Stress ◽  
Diffusional Creep ◽  
Creep Model ◽  
Substrate Interface ◽  
Film Substrate

AbstractWhen confronted by severe geometric constraints, dislocations may respond in unforeseen ways. One example of such unexpected behavior is parallel glide in unpassivated, ultrathin (200 nm and thinner) metal films. This involves the glide of dislocations parallel to and very near the film/substrate interface, following their emission from grain boundaries. In situ transmission electron microscopy reveals that this mechanism dominates the thermomechanical behavior of ultrathin, unpassivated copper films. However, according to Schmid's law, the biaxial film stress that evolves during thermal cycling does not generate a resolved shear stress parallel to the film/substrate interface and therefore should not drive such motion. Instead, it is proposed that the observed dislocations are generated as a result of atomic diffusion into the grain boundaries. This provides experimental support for the constrained diffusional creep model of Gao et al.[1], in which they described the diffusional exchange of atoms between the unpassivated film surface and grain boundaries at high temperatures, a process that can locally relax the film stress near those boundaries. In the grains where it is observed, parallel glide can account for the plastic strain generated within a film during thermal cycling. One feature of this mechanism at the nanoscale is that, as grain size decreases, eventually a single dislocation suffices to mediate plasticity in an entire grain during thermal cycling. Parallel glide is a new example of the interactions between dislocations and the surface/interface, which are likely to increase in importance during the persistent miniaturization of thin film geometries.

Selecting the Temperature–Frequency Parameters of the Ultrasonic Measuring of Elastomer Figures of Merit

2020 ◽  
Vol 84 (11) ◽  
pp. 1415-1418
Author(s):  
S. G. Tikhomirov ◽  
S. L. Podvalny ◽  
V. I. Ryazhskikh ◽  
A. A. Khvostov ◽  
A. V. Karmanov
Keyword(s):  
Figures Of Merit ◽  
Ultrasonic Measuring
Sign in / Sign up

Export Citation Format

Share Document