Threading Dislocation Dynamics in ZnSSe Strained-Layer Superlattices

2020 ◽  
Vol 97 (4) ◽  
pp. 79-88
Author(s):  
Johanna Raphael ◽  
Tedi Kujofsa ◽  
John E Ayers
Keyword(s):  
Dislocation Dynamics ◽  
Threading Dislocation ◽  
Strained Layer ◽  
Strained Layer Superlattices

Threading Dislocation Dynamics in ZnSSe Strained-Layer Superlattices

2020 ◽  
Vol MA2020-01 (23) ◽  
pp. 1363-1363
Author(s):  
Johanna Raphael ◽  
Tedi Kujofsa ◽  
John E Ayers
Keyword(s):  
Dislocation Dynamics ◽  
Threading Dislocation ◽  
Strained Layer ◽  
Strained Layer Superlattices

A Zagging and Weaving Model for Dislocation Interactions in Heterostructures Containing Strain Reversals

2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040003
Author(s):  
Tedi Kujofsa ◽  
J. E. Ayers
Keyword(s):  
Semiconductor Device ◽  
Dislocation Dynamics ◽  
Physical Models ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Strained Layer ◽  
Device Structures ◽  
Dislocation Interactions ◽  
Dislocation Behavior ◽  
Strained Layer Superlattices

Strained-layer superlattices (SLSs) have been used to modify the threading dislocation behavior in metamorphic semiconductor device structures; in some cases they have even been used to block the propagation of threading dislocations and are referred to in these applications as “dislocation filters.” However, such applications of SLSs have been impeded by the lack of detailed physical models. Here we present a “zagging and weaving” model for dislocation interactions in multilayers and strained-layer superlattices, and we demonstrate the use of this model to the threading dislocation dynamics in InGaAs/GaAs (001) structures containing SLSs.

Propagation of Dislocations Through GeSi/Si Strained Layers and Superlattices

1988 ◽  
Vol 116 ◽  
Author(s):  
R. Hull ◽  
J.C. Bean ◽  
R.E. Leibenguth
Keyword(s):  
Single Layer ◽  
Dislocation Nucleation ◽  
Threading Dislocation ◽  
Misfit Dislocations ◽  
Strained Layers ◽  
Activation Barriers ◽  
Strained Layer ◽  
Growth Activation ◽  
Si Epitaxy ◽  
Strained Layer Superlattices

AbstractWe describe in-situ transmission electron microscope observations of the relaxation of strained layer GeSi/Si epitaxy. Dynamic observations of misfit dislocations in these structures reveal that dislocation nucleation and growth activation barriers, as well as interactions, limit the rate at which strain is relieved. The equivalence of threading and misfit dislocations in this system is demonstrated. Extension of the principles learnt from these single layer experiments to threading dislocation propagation through multilayer structures, enables us to understand the relative inefficiency of GeSi/Si strained layer superlattices in blocking threading dislocations.

Dislocation Density Reduction in GaAs Epilayers on Si Using Strained Layer Superlattices

1989 ◽  
Vol 160 ◽  
Author(s):  
S. Sharan ◽  
J. Narayan ◽  
J. C. C. Fan
Keyword(s):  
Dislocation Density ◽  
Defect Density ◽  
Full Potential ◽  
Threading Dislocation ◽  
Threading Dislocations ◽  
Strained Layer ◽  
Density Reduction ◽  
Threading Dislocation Density ◽  
Superlattice Structures ◽  
Strained Layer Superlattices

AbstractDefects such as dislocations and interfaces play a crucial role in the performance of heterostracture devices. The full potential of GaAs on Si heterostructures can only be realized by controlling the defect density. The reduction of threading dislocations by the use of strained layer superlattices has been studied in these heterostructures. Several superlattice structures have been used to reduce the density of threading dislocations in the GaAs epilayer. The use of strained layer superlattices in conjunction with rapid thermal annealing was most effective in reducing threading dislocation density. Transmission electron microscopy has been used to study the dislocation density reduction and the interaction of threading dislocations with the strained layers. A model has been developed based on energy considerations to determine the critical thickness required for the bending of threading dislocations.

Si-Ge STRAINED LAYER SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-321-C5-327 ◽  
Author(s):  
H. BRUGGER ◽  
G. ABSTREITER
Keyword(s):  
Strained Layer ◽  
Strained Layer Superlattices

nBn structure based on InAs∕GaSb type-II strained layer superlattices

2007 ◽  
Vol 91 (4) ◽  
pp. 043514 ◽  
Author(s):  
J. B. Rodriguez ◽  
E. Plis ◽  
G. Bishop ◽  
Y. D. Sharma ◽  
H. Kim ◽  
...  
Keyword(s):  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattices

Space-charge effects in type-II strained layer superlattices

1998 ◽  
Vol 184-185 ◽  
pp. 728-731 ◽  
Author(s):  
I.V. Bradley ◽  
J.P. Creasey ◽  
K.P. O'Donnell
Keyword(s):  
Space Charge ◽  
Type Ii ◽  
Space Charge Effects ◽  
Charge Effects ◽  
Strained Layer ◽  
Strained Layer Superlattices

On the Existence of Multiple Equilibrium States in Strained-Layer Superlattices

1987 ◽  
Vol 103 ◽  
Author(s):  
William C. Johnson
Keyword(s):  
Free Energy ◽  
Equilibrium State ◽  
Stable Equilibrium ◽  
Multiple Equilibrium ◽  
Equilibrium Thermodynamic ◽  
Relative Thickness ◽  
Two Phase ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTUsing recent results from the thermodynamics of stressed solids, two-phase coexistence in a simple binary strained-layer superlattice is examined. We show that for a given temperature and overall composition of the superlattice, there can exist more than one linearly stable, equilibrium thermodynamic state. That is, there may exist several combinations of relative thickness of the phases and corresponding phase compositions that minimize the free energy of the system. The equilibrium state observed experimentally can, therefore, be influenced by the processing path.

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