(Invited) Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors

Gourab Sabui; Vitaly Z. Zubialevich; Pietro Pampili; Mary White; Peter J. Parbrook; Mathew McLaren; Miryam Arredondo-Arechavala; Z. John Shen

doi:10.1149/08007.0069ecst

(Invited) Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors

ECS Transactions ◽

10.1149/08007.0069ecst ◽

2017 ◽

Vol 80 (7) ◽

pp. 69-85 ◽

Cited By ~ 6

Author(s):

Gourab Sabui ◽

Vitaly Z. Zubialevich ◽

Pietro Pampili ◽

Mary White ◽

Peter J. Parbrook ◽

...

Keyword(s):

High Voltage ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Gan Nanowire

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(Invited) Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors

ECS Meeting Abstracts ◽

10.1149/ma2017-02/31/1320 ◽

2017 ◽

Keyword(s):

High Voltage ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Gan Nanowire

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A TCAD Simulation Study of Three-Independent-Gate Field-Effect Transistors at the 10-nm Node

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3089671 ◽

2021 ◽

pp. 1-7

Author(s):

Patsy Cadareanu ◽

Pierre-Emmanuel Gaillardon

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Tcad Simulation ◽

Independent Gate

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Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3510502 ◽

2010 ◽

Vol 108 (10) ◽

pp. 104503 ◽

Cited By ~ 11

Author(s):

M. Abul Khayer ◽

Roger K. Lake

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors ◽

Gan Nanowire ◽

And Performance

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Corrections to “a three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry” [Aug 06 1782-1788]

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.917329 ◽

2008 ◽

Vol 55 (4) ◽

pp. 1094-1095 ◽

Cited By ~ 5

Author(s):

Gianluca Fiori ◽

Giuseppe Iannaccone ◽

Gerhard Klimeck

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Dimensional Simulation ◽

Realistic Geometry

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Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks

Applied Physics Letters ◽

10.1063/1.4773914 ◽

2013 ◽

Vol 102 (1) ◽

pp. 012106 ◽

Cited By ~ 4

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Bin-Wei Wang ◽

Ying-Shin Lu ◽

Wen-Hung Lo ◽

...

Keyword(s):

Metal Oxide ◽

High Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Charge Pumping

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Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2274477 ◽

2013 ◽

Vol 60 (10) ◽

pp. 3190-3196 ◽

Cited By ~ 78

Author(s):

Donghyun Jin ◽

Jesus A. del Alamo

Keyword(s):

High Voltage ◽

Field Effect ◽

Field Effect Transistors

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Low-distortion GaAs-based field effect transistors with InGaP channel layer for high-voltage operation

International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) ◽

10.1109/iedm.1998.746247 ◽

2002 ◽

Cited By ~ 7

Author(s):

N. Hara ◽

Y. Nakasha ◽

T. Kikkawa ◽

H. Takahashi ◽

K. Joshin ◽

...

Keyword(s):

High Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Channel Layer ◽

Low Distortion

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Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.04dp08 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DP08 ◽

Cited By ~ 1

Author(s):

Yandong He ◽

Ganggang Zhang

Keyword(s):

High Voltage ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Hot Carrier ◽

Current Voltage ◽

Trench Isolation

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Improved performance of sub-10-nm band-to-band tunneling n-i-n graphene nanoribbon field-effect transistors using underlap engineering: A quantum simulation study

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2021.110312 ◽

2021 ◽

pp. 110312

Author(s):

Khalil Tamersit ◽

Zeinab Ramezani ◽

I.S. Amiri

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

Band To Band Tunneling ◽

Improved Performance

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Low cost high voltage GaN polarization superjunction field effect transistors

physica status solidi (a) ◽

10.1002/pssa.201600834 ◽

2017 ◽

Vol 214 (8) ◽

pp. 1600834 ◽

Cited By ~ 10

Author(s):

H. Kawai ◽

S. Yagi ◽

S. Hirata ◽

F. Nakamura ◽

T. Saito ◽

...

Keyword(s):

High Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Low Cost

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